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Part: BAP27-01
Category:
Discrete
-> Diodes & Rectifiers
-> PIN Diodes
Description:
Company: Philips Semiconductors
Datasheet: Download BAP27-01 datasheet File size : 34 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAP27-01 Silicon PIN diode
Preliminary specification 2001 Nov 01
Philips Semiconductors
Preliminary specification
Silicon PIN diode
FEATURES · High speed switching for RF signals · Low diode capacitance · Low diode forward resistance · Very low series inductance · For applications up to 4 GHz. APPLICATIONS · RF attenuators and switches. D ESCR I PTIO N Planar PIN diode in a SOD723A ultra small plastic SMD package. PINNING PIN 1 2
BAP27-01
D ESCR I PTIO N cathode anode
handbook, halfpage
Ma rk ing code: M1
Fig.1 Simplified outline (SOD723A) and symbol.
;
1 2 Top view
MAM405
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS - - - -65 -65 MIN. MAX. 50 100 315 +150 +150 UNIT V mA mW °C °C
2001 Nov 01
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance IF = 5 0 m A VR = 20 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 5 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 |s21 |2 isolation VR = 0; f = 900 MHz VR = 0; f = 1800 MHz VR = 0; f = 2450 MHz |s21 |2 insertion loss IF = 0.5 mA; f = 900 MHz IF = 0.5 mA; f = 1800 MHz IF = 0.5 mA; f = 2450 MHz |s21 |2 insertion loss IF = 1 mA; f = 900 MHz IF = 1 mA; f = 1800 MHz IF = 1 mA; f = 2450 MHz |s21 |2 insertion loss IF = 10 mA; f = 900 MHz IF = 10 mA; f = 1800 MHz IF = 10 mA; f = 2450 MHz |s21 |2 insertion loss IF = 100 mA; f = 900 MHz IF = 100 mA; f = 1800 MHz IF = 100 mA; f = 2450 MHz L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 ; measured at IR = 3 mA CONDITIONS - 0.45 0.35 0.27 1.6 1.2 0.7 0.6 12.3 7.7 6.0 0.17 0.19 0.21 0.13 0.15 0.18 0.08 0.11 0.14 0.06 0.10 0.12 0.17 TYP. 0.95
BAP27-01
MAX. 1.1 20 - 0.45 0.32 2.5 2.0 1.2 0.95 - - - - - - - - - - - - - - - -
UNIT V nA pF pF pF dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB µs
LS N o te
series inductance
0.6
-
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS SYMBOL R t h j -s PARAMETER thermal resistance from junction to soldering point VAL UE 190 UNIT K/W
2001 Nov 01
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
GRAPHICAL DATA
BAP27-01
10 rD ( )
500 Cd (pF) 400
300
1
200
100
0.1 0.1
f = 100 MHz; T j = 2 5 °C .
0
1 10 100 IF (mA)
0
4
8
12
16 VR (V)
20
f = 1 MHz; T j = 25 °C .
Fig.2
Forward resistance as a function of forward current; typical values.
Fig.3
Diode capacitance as a function of reverse voltage; typical values.
0 |s21|2 (dB) -0.1
(3) (4)
0 |s21|2 (dB) -10
-0.2
(1) (2)
-20 -0.3 -30
-0.4
-0.5 0
(1) I F = 0. 5 mA. (2) I F = 1 mA.
-40 1
(3) I F = 10 mA. (4) I F = 10 0 mA. Diode zero biased and inserted in series with a 50 stripline circuit. T amb = 2 5 °C.
2 f (GHz)
3
0
1
2 f (GHz)
3
Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. T amb = 25 °C .
Fig.4
Insertion loss (|s21|2) of the diode as a function of frequency; typical values.
Fig.5
Isolation (|s21|2) of the diode as a function of frequency; typical values.
2001 Nov 01
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
PACKAGE OUTLINE
BAP27-01
SOD723A
Fig.6
R DE UN
T EN PM LO VE DE
2001 Nov 01
5
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