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Part: BAP50-04
Category:
Discrete
-> Diodes & Rectifiers
-> Protection
Description: BAP50-04; General Purpose Pin Diode
Company: Philips Semiconductors
Datasheet: Download BAP50-04 datasheet File size : 34 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
BAP50-04 General purpose PIN diode
Product specification Supersedes data of 1999 May 10 1999 Dec 03
Philips Semiconductors
Product specification
General purpose PIN diode
FEATURES · Two elements in series configuration in a small-sized plastic SMD package · Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications.
handbook, halfpage 2
BAP50-04
PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection
1
DESCRIPTION Two planar PIN diodes in series configuration in an SOT23 small plastic SMD package.
3 2 3
MAM232
1
Marking code: 4Lp.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C - - - -65 -65 50 50 250 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Dec 03
2
Philips Semiconductors
Product specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF VR IR Cd forward voltage reverse voltage reverse current diode capacitance IF = 50 mA IR = 10 µA VR = 50 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 L LS Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 220 charge carrier life time series inductance when switched from IF 10 mA to IR 6 mA; RL 100 ; measured at IR 3 mA - 50 - - - - - - - - - PARAMETER CONDITIONS MIN.
BAP50-04
TYP.
MAX. UNIT
0.95 - - 0.45 0.35 0.3 25 14 3 1.05 1.4
1.1 - 100 - 0.6 0.5 40 25 5 - -
V V nA pF pF pF µs nH
UNIT K/W
1999 Dec 03
3
Philips Semiconductors
Product specification
General purpose PIN diode
GRAPHICAL DATA
BAP50-04
103 handbook, halfpage r D () 102
MGS317
handbook, halfpage
600
MGL927
Cd (fF)
400
10
200
1 10 - 2
10 - 1
0 1 I F (mA) 10 0 5 10 15 VR (V) 20
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.2
Forward resistance as a function of the forward current; typical values.
Fig.3
Diode capacitance as a function of reverse voltage; typical values.
handbook, halfpage 2
0
MGS319
|S21|
(1) (2)
handbook, halfpage 2
0
MGS320
|S21|
( dB ) -1
( dB ) -5
(3)
-2
- 10
-3
- 15
-4
- 20
-5 0.5
1
1.5
2
2.5 f (GHz)
3
- 25 0.5
1
1.5
2
2.5 f (GHz)
3
(1) IF = 10 mA.
(2) IF = 1 mA.
(3) IF = 0.5 mA. Diode zero biased and inserted in series with a 50 stripline circuit. Tamb = 25 °C.
Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C.
Fig.4
Insertion loss (|S21|2) of the diode in on-state as a function of frequency; typical values.
Fig.5
Isolation (|S21|2) of the diode in off-state as a function of frequency; typical values.
1999 Dec 03
4
Philips Semiconductors
Product specification
General purpose PIN diode
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BAP50-04
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
1999 Dec 03
5
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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