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Part: BAP64-05W
Category:
Discrete
-> Diodes & Rectifiers
-> PIN Diodes
Description: BAP64-05W; Silicon Pin Diode
Company: Philips Semiconductors
Datasheet: Download BAP64-05W datasheet File size : 58 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAP64-05W Silicon PIN diode
Product specification 2000 Jul 13
Philips Semiconductors
Product specification
Silicon PIN diode
FEATURES · High voltage, current controlled · RF resistor for RF attenuators and switches · Low diode capacitance · Low diode forward resistance · Low series inductance · For applications up to 3 GHz. APPLICATIONS · RF attenuators and switches.
1
handbook, halfpage
BAP64-05W
PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common cathode
3
3
2
GENERAL DESCRIPTION Two planar PIN diodes in common cathode configuration in a SOT323 small SMD plastic package.
1 Top view
2
MAM382
Marking code: 5W-
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C - - - -65 -65 100 100 240 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
2000 Jul 13
2
Philips Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF IR Cd forward voltage reverse current diode capacitance IF = 50 mA VR = 100 V VR = 20 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz; note 1 L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 ; measured at IR = 3 mA PARAMETER CONDITIONS
BAP64-05W
TYP.
MAX.
UNIT
0.95 - - 0.52 0.37 0.23 20 10 2 0.7 1.55
1.1 10 1 - - 0.35 40 20 3.8 1.35 -
V µA µA pF pF pF µs
LS Note
series inductance
1.2
-
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 250 UNIT K/W
2000 Jul 13
3
Philips Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP64-05W
102 handbook, halfpage rD () 10
MLD365
handbook, halfpage
500 Cd
MLD366
(fF) 400
300
200 1 100
10-1 10-1
1
10
IF (mA)
102
0 0 4 8 12 16 VR (V) 20
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.2
Forward resistance as a function of forward current; typical values.
Fig.3
Diode capacitance as a function of reverse voltage; typical values.
handbook, halfpage s2
0
MLD367
21 (dB) -0.5
handbook, halfpage s2
(1) (2)
0
MLD368
21 (dB) -5
(3)
-1
-10
-1.5
(4)
-15
-2
-20
-2.5 0.5 (1) IF = 100 mA. (2) IF = 10 mA.
1
1.5
2
2.5
f (GHz)
3
-25 0.5
1
1.5
2
2.5
f (GHz)
3
(3) IF = 1 mA. (4) IF = 0.5 mA.
Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C.
Diode zero biased and inserted in series with a 50 stripline circuit. Tamb = 25 °C.
Fig.4
Insertion loss (|s21|2) of the diode as a function of frequency; typical values.
Fig.5
Isolation (|s21|2) of the diode as a function of frequency; typical values.
2000 Jul 13
4
Philips Semiconductors
Product specification
Silicon PIN diode
BAP64-05W
handbook, halfpage
150
MLD369
IP2 (dB) 100 1800 MHz 900 MHz
50
0 10-1
1
IF (mA)
10
Tamb = 25 °C; typical values.
Fig.6
Second order intercept point as a function of forward current; typical values.
2000 Jul 13
5
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