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Part: BAS16T
Category:
Discrete
-> Diodes & Rectifiers
-> Switching Diodes
Description: BAS16T; High-speed Diode;; Package: SOT416 (EMT3, SMPAK)
Company: Philips Semiconductors
Datasheet: Download BAS16T datasheet File size : 51 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BAS16T High-speed diode
Product specification File under Discrete Semiconductors, SC01 1998 Jan 20
Philips Semiconductors
Product specification
High-speed diode
FEATURES · Very small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 500 mA. APPLICATIONS · High-speed switching in e.g. surface mounted circuits.
1 Top view Marking code: A6. 2
MAM393
BAS16T
DESCRIPTION The BAS16T is a high-speed switching diode fabricated in planar technology, and encapsulated in the very small plastic SMD SOT416 (SC-75) package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode
handbook, 4 columns
3
3 1 2 n.c.
Fig.1 Simplified outline (SOT416; SC-75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square pulse; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Ts = 90 °C - - - - -65 - 4 1 0.5 170 +150 150 A A A mW °C °C Ts = 90 °C; see Fig.2 CONDITIONS - - - - MIN. MAX. 85 75 155 500 V V mA mA UNIT
1998 Jan 20
2
Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd trr Vfr diode capacitance reverse recovery time forward recovery voltage f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 30 1 30 50 1.5 4 1.75 715 855 1 1.25 CONDITIONS
BAS16T
MAX.
UNIT mV mV V V nA µA µA µA pF ns V
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS TS = 90 °C VALUE 350 UNIT K/W
1998 Jan 20
3
Philips Semiconductors
Product specification
High-speed diode
GRAPHICAL DATA
MBK570
BAS16T
handbook, halfpage
300
handbook, halfpage
300
MBG382
IF (mA) 200
IF (mA)
(1) (2) (3)
200
100
100
0 0 100 Ts (°C) 200
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of soldering point temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10
102
103
tp (µs)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1998 Jan 20
4
Philips Semiconductors
Product specification
High-speed diode
BAS16T
105 IR (nA) 10
4
MGA884
handbook, halfpage
0.8
MBG446
Cd (pF) V R = 75 V 0.6
103
max
75 V
0.4
10
2
25 V 0.2 typ typ
10
0 100 T j ( o C) 200 0 4 8 12 VR (V) 16
0
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1998 Jan 20
5
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