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Part: BAS16VY
Category:
Discrete
-> Diodes & Rectifiers
-> Switching Diodes
Description: BAS16VY; High-speed Switching Diode Array;; Package: SOT363 (UMT6)
Company: Philips Semiconductors
Datasheet: Download BAS16VY datasheet File size : 602 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BAS16VY High-speed switching diode array
Product specification 2003 Apr 08
Philips Semiconductors
Product specification
High-speed switching diode array
FEATURES · Small plastic SMD package · High switching speed · Three electrically isolated diodes · Low capacitance. APPLICATIONS · General purpose switching in surface mounted circuits. DESCRIPTION The BAS16VY consists of three electrically isolated high-speed switching diodes, encapsulated in a small SOT363 (SC-88) SMD plastic package. PINNING PIN 1 2 3 4 5 6
BAS16VY
DESCRIPTION anode (a1) anode (a2) anode (a3) cathode (k3) cathode (k2) cathode (k1)
6 handbook, halfpage
5
4
6
5
4
1 1 Top view Marking code: 16p. 2 3
2
3
MDB061
Fig.1
Simplified outline (SOT363; SC-88) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Solder points at pins: 2, 3, 5 and 6. total power dissipation storage temperature junction temperature Ts = 85 °C; note 1 - - - - -65 -65 4.5 1 0.5 250 +150 +150 A A A mW °C °C - - - - 85 75 200 450 V V mA mA PARAMETER CONDITIONS MIN. MAX. UNIT
2003 Apr 08
2
Philips Semiconductors
Product specification
High-speed switching diode array
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd trr Vfr diode capacitance reverse recovery time forward recovery voltage f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 30 1 30 50 1.5 4 PARAMETER CONDITIONS
BAS16VY
MAX.
UNIT
715 855 1 1.25
mV mV V V nA µA µA µA pF ns V
1.75
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Solder points at pins: 2, 3, 5 and 6. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 260 UNIT K/W
2003 Apr 08
3
Philips Semiconductors
Product specification
High-speed switching diode array
GRAPHICAL DATA
MGW102
BAS16VY
handbook, halfpage
250
handbook, halfpage
300
MBG382
I Fmax (mA)
200
IF (mA)
(1) (2) (3)
200 150
100 100 50
0 0 50 100 Ts (°C) 150
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of soldering point temperature.
Fig.3
Forward current as a function of forward voltage.
handbook, full pagewidth
10
MGW103
I FSM (A)
1
10 -1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10
10 2
103
t p (µs)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Apr 08
4
Philips Semiconductors
Product specification
High-speed switching diode array
BAS16VY
105 IR (nA) 10
4
MGA884
handbook, halfpage
0.8
MBG446
Cd (pF) V R = 75 V 0.6
103
max
75 V
0.4
10
2
25 V 0.2 typ typ
10
0 100 T j ( o C) 200 0 4 8 12 VR (V) 16
0
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
2003 Apr 08
5
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