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Part: BAT160
Category:
Description: Schottky Barrier Double Diodes
Company: Philips Semiconductors
Datasheet: Download BAT160 datasheet File size : 82 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D087
BAT160 series Schottky barrier double diodes
Product specification Supersedes data of 1999 Mar 26 1999 Sep 20
Philips Semiconductors
Product specification
Schottky barrier double diodes
FEATURES · Low switching losses · Capability of absorbing very high surge current · Fast recovery time · Guard ring protected · Plastic SMD package. APPLICATIONS · Low power switched-mode power supplies · Rectification · Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package.
1 2 3
MSB002 - 1
BAT160 series
PINNING BAT160 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT160A diode configuration (symbol).
page
4 1 3
2 n.c.
MGL171
age
4
page
4 1 3
2 n.c.
MGL172
Fig.3
Top view
BAT160C diode configuration (symbol).
MARKING TYPE NUMBER BAT160A BAT160C BAT160S MARKING CODE AT160A AT160C AT160S
page
4 1 2 n.c. 3
Fig.1
Simplified outline (SOT223) and pin configuration.
MGL173
Fig.4
BAT160S diode configuration (symbol).
1999 Sep 20
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFSM IRSM Tstg Tj continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature tp = 8.3 ms; half sinewave; JEDEC method tp = 100 µs - - - - PARAMETER CONDITIONS
BAT160 series
MIN.
MAX.
UNIT
60 1 10 0.5 +150 150
V A A A °C °C
-65 -
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.5 IF = 100 mA IF = 1 A IF = 2 A IR reverse current VR = 60 V; note 1; see Fig.6 VR = 60 V; Tj = 100 °C; note 1; see Fig.6 Cd Note 1. Pulse test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 100 UNIT K/W diode capacitance f = 1 MHz; VR = 4 V; see Fig 7 400 650 850 350 8 60 mV mV mV µA mA pF PARAMETER CONDITIONS MAX. UNIT
1999 Sep 20
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
GRAPHICAL DATA
BAT160 series
104 handbook, halfpage IF (mA) 103
MCD784
105 handbook, halfpage (µA) 104
(1)
MCD768
IR
103
(2) (3)
102
(2)
102
10
(3) (4) (4)
10
(1)
1 10-1 0 0.2 0.4 0.6 VF (V) 0.8 0 20 40 VR (V) 60
1
(1) Tamb = 125 °C. (2) Tamb = 100 °C.
(3) Tamb = 75 °C. (4) Tamb = 25 °C.
(1) Tamb = 125 °C. (2) Tamb = 100 °C.
(3) Tamb = 75 °C. (4) Tamb = 25 °C.
Fig.5
Forward current as a function of forward voltage; typical values.
Fig.6
Reverse current as a function of reverse voltage; typical values.
103 handbook, halfpage
MCD766
Cd (pF)
102
10
0
20
40
VR (V)
60
f = 1 MHz; Tamb = 25 °C.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
1999 Sep 20
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BAT160 series
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
1999 Sep 20
5
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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