|
|
Part: BAT17
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: BAT17; Schottky Barrier Diode;; Package: SOT23 (SST3)
Company: Philips Semiconductors
Datasheet: Download BAT17 datasheet File size : 82 kB
Request For quote: Find where to buy BAT17
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT17 Schottky barrier diode
Product specification Supersedes data of 1999 May 26 2003 Mar 25
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES · Low forward voltage · Small SMD package · Low capacitance. APPLICATIONS · UHF mixer · Sampling circuits · Modulators · Phase detection. DESCRIPTION Planar Schottky barrier diode in a small SOT23 plastic SMD package. MARKING TYPE NUMBER BAT17 Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. = W : Made in China. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER - - -65 - MIN. 4 30 +150 100 MARKING CODE(1) A3* Fig.1 Simplified outline (SOT23) and symbol.
3
handbook, halfpage 2
BAT17
PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION
1 2 n.c. 3
MAM171
1
MAX. V
UNIT mA °C °C
2003 Mar 25
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA IR rD Cd F Note 1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 reverse current diode forward resistance diode capacitance noise figure VR = 3 V; see Fig.3 VR = 3 V; Tamb = 60 °C; see Fig.3 f = 1 kHz; IF = 5 mA f = 1 MHz; VR = 0; see Fig.4 f = 900 MHz; note 1 350 450 600 0.25 1.25 15 1 8 CONDITIONS MAX.
BAT17
UNIT mV mV mV µA µA pF dB
UNIT K/W
2003 Mar 25
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
BAT17
2 handbook10 , halfpage
MLC795
10 4 handbook, halfpage IR (nA)
MLC796
IF (mA) 10
10 3
(1)
(1)
10 2
(2) (3)
1
(2) (3) (4)
10 (4) 1
10-1
10-2 0 200 400 600 VF (mV) 800
10 1
0
1
2
V R (V)
3
(1) Tamb = 100 °C. (2) Tamb = 60 °C.
(3) Tamb = 25 °C. (4) Tamb = -40 °C.
(1) Tamb = 100 °C. (2) Tamb = 60 °C.
(3) Tamb = 25 °C. (4) Tamb = -40 °C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
MLC797
handbook, halfpage
0.8
Cd (pF) 0.7
0.6
0.5
0.4 0 1 2 3 V R (V) 4
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2003 Mar 25
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BAT17
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2003 Mar 25
5
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
|
|
|
