Details, datasheet, quote on part number: BAV23S
PartBAV23S
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionBAV23S; General Purpose Double Diode;; Package: SOT23 (SST3)
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BAV23S datasheet
Cross ref.Similar parts: MMBD1403, MMBD1403A, MMBD1503, MMBD1503A, GSD2004S-V, BAS21SLT1G, BAS21SLT1, CMPD2004S, CMPD2003S
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Features, Applications

FEATURES Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 200 V Repetitive peak reverse voltage: max. 250 V Repetitive peak forward current: max. 625 mA. APPLICATIONS General purpose where high breakdown voltages are required. DESCRIPTION The BAV23S consists of two general purpose diodes connected in series fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.

PINNING MARKING or V5 PIN 2 3 DESCRIPTION anode cathode common connection
MARKING TYPE NUMBER BAV23S Note = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage repetitive peak reverse voltage series connection continuous reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; 25 C prior to surge; see 10 ms Ptot Tstg Tj Note 1. Device mounted an FR4 printed-circuit board. 2001 Oct 12 2 total power dissipation storage temperature junction temperature Tamb = 25 C; note mW C series connection single diode loaded; note 1; see Fig.2 mA PARAMETER CONDITIONS MIN. MAX. UNIT

ELECTRICAL CHARACTERISTICS 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see mA VF forward voltage series connection; see mA IR reverse current see C IR reverse current series connection C Cd trr diode capacitance reverse recovery time = 1 MHz; = 0; see Fig.6 when switched from = 30 mA; 100 ; measured = 3 mA; see Fig.7 PARAMETER CONDITIONS MAX.

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W


 

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