Details, datasheet, quote on part number: BAV45
PartBAV45
CategoryDiscrete => Diodes & Rectifiers => General Purpose Diodes
DescriptionBAV45; Picoampere Diode
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BAV45 datasheet
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Features, Applications

FEATURES Extremely low leakage current: max. 5 pA Low diode capacitance Light insensitive. APPLICATION Clamping Holding Peak follower Time delay circuits Logarithmic amplifiers Protection of insulated gate field-effect transistors. Fig.1

DESCRIPTION Silicon diode in a metal TO-18 can. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light.

CAUTION Handle the device with care whilst soldering into the circuit. The extremely low leakage current can only be guaranteed when the bottom is free from solder flux or other contaminations. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM Ptot Tstg Tj Note 1. Device mounted a FR4 printed-circuit board. PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 see Fig.2 CONDITIONS MIN. MAX. mW C UNIT

ELECTRICAL CHARACTERISTICS 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see V Cd trr diode capacitance reverse recovery time = 1 MHz; = 0; see Fig.6 when switched from = 10 mA; 100 ; measured = 1 mA; see 250 10 CONDITIONS = 10 mA; see Figs 3 and 4 MAX. 1

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted a FR4 printed-circuit board. GRAPHICAL DATA PARAMETER thermal resistance from junction to ambient; note 1 VALUE 500 UNIT K/W

Maximum permissible continuous forward current as a function of ambient temperature.
Forward current as a function of forward voltage; typical values.

 

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