Details, datasheet, quote on part number: BAV99
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionHigh-speed Switching Diodes
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BAV99 datasheet
Cross ref.Similar parts: BAV 99 E6706, BAR63-03W, BB639C, BCR523, BCX71J, TLE4274D V33, TLE4274D V50, TLE4296-2G V50, BAV199, TLE6250G
Find where to buy


Features, Applications

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.

Table 1. Product overview Package NXP SOT363 SOT323 JEITA SC-88 SC-70 JEDEC TO-236AB dual series quadruple; 2 series dual series Configuration Package configuration small very small very small

I High switching speed: trr ns I Low leakage current I Small SMD plastic packages I Low capacitance: pF I Reverse voltage: 100 V

I High-speed switching I General-purpose switching I Reverse polarity protection
Quick reference data Parameter reverse current reverse voltage reverse recovery time

Table 3. Pin 2 3 Pinning Description anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2)

BAV99S anode (diode 1) cathode (diode 2) cathode (diode 3), anode (diode 4) anode (diode 3) cathode (diode 4) cathode (diode 1), anode (diode 2)

Table 4. Ordering information Package Name SC-88 SC-70 Description plastic surface-mounted package; 3 leads plastic surface-mounted package; 6 leads plastic surface-mounted package; 3 leads Version SOT363 SOT323 Type number

* = made in Hong Kong = p: made in Hong Kong = t: made in Malaysia = W: made in China

Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode VRRM VR IF repetitive peak reverse voltage reverse voltage forward current BAV99S BAV99W IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave 1 s Ptot total power dissipation BAV99S BAV99W Per device Tj Tamb Tstg

junction temperature ambient temperature storage temperature
Single diode loaded. Double diode loaded. 25 C prior to surge.

Device mounted an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Soldering points at pins 3, 5 and 6.


Related products with the same datasheet
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BAV99S High-speed Switching DiodesHigh-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
PESD5V0U5BV Ultra Low Capacitance Bidirectional Fivefold ESD Protection ArraysUltra low capacitance bidirectional fivefold ElectroStatic Discharge (ESD) protection arrays in ultra small Surface-Mounted Device (SMD)
PZU10B2L Single Zener DiodesGeneral-purpose Zener diodes in SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package.
TFF1004HN Ntegrated Mixer Oscillator PLL For Satellite LNBThe TFF1004HN/N1 is an integrated downconverter for use in Low Noise Block (LNB) convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system.
NX5DV330 Quad 1-of-2 Video Multiplexer/demultiplexerThe NX5DV330 is a quad 1-of-2 high-speed TTL-compatible video multiplexer/demultiplexer. The low ON resistance of the switch allows inputs to be connected to outputs
BZB84 Dual Zener DiodesGeneral-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

74HC/HCT11 : CMOS/BiCMOS->HC/HCT Family Triple 3-input And Gate

74LVT00PWDH : 74LVT00; 3.3 V Quad 2-input NAND Gate;; Package: SOT108-1 (SO14), SOT337-1 (SSOP14), SOT402-1 (TSSOP14)

BCY79IX : PNP Switching Transistors

BF904AR : Single BF904A; BF904AR; BF904AWR; N-channel Dual Gate MOS-FETs

BT139B-800F : Triacs

PCF80C31-3N : CMOS Single-chip 8-bit Microcontrollers

PHT8N06LT : PHT8N06LT; Trenchmos (tm) Transistor Logic Level FET;; Package: SOT223 (SC-73)

SE98TK/1 : SO-DIMM SMBus/I2C-bus temperature sensor General description The SE98 is a JEDEC compliant local temperature sensor specifically designed for higher performance SO-DIMM applications. The temperature sensor is mounted on the SO-DIMM module and communicates with the processor via the I2C-bus/SMBus

Same catergory

APT15D60K : . Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers MAXIMUM RATINGS Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse.

BD138-6 : PNP Silicon Transistors.

BSS123Q62702-S512 : Transistor MOSFET Sot23. Maximum Ratings Parameter Symbol Values Unit Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Therminal resistance, chip-substrate- reverse side 1) DIN humidity category, DIN 40 IEC climatic category, DIN IEC 68-1 Electrical.

FQU13N10 : Enhancement N-Channel. 100V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

GT15J301 : Vces (volts) = 600 ;; Ic (amps) = 15 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.4 ;; Toff (usec) = 0.5 ;; Additional Information =  .

MA2SV09 : Marking = 4A ;; VR(V) = 6 ;; IF(mA) = ;; Package = SSMini2-F2. Good linearity and large capacitance-ratio - VR relation Small series resistance rD SS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating to +150 Unit V C Parameter Reverse current (DC) Diode capacitance.

SBC547 : Small Signal Transistor, General Purpose Bipolar Transistor. Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector.

0805B123P500YHT : CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.012 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0120 microF ; Capacitance Tolerance: 100 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

A535-SZK-003 : 2 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 2 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Inductance Tolerance: 30 (+/- %) ; DCR: 0.1380 ohms ; Testing Frequency: 100 kHz.

ECHE1103GZ2.5 : CAPACITOR, METALLIZED FILM, POLYPHENYLENE SULPHIDE, 100 V, 0.01 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: POLYPHENYLENE SULPHIDE ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 100 volts ; Mounting Style:.


SDA380AA : 10 A, 50 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Anode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; Package: HERMETIC SEALED PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

2N1034 : 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5. s: Polarity: PNP ; Package Type: TO-5, 3 PIN.

303135-10K000-DBT : RESISTOR, METAL FOIL, 0.15 W, 0.5 %, 0.2 ppm, 10000 ohm, SURFACE MOUNT, 1206. s: Category / Application: General Use ; Technology / Construction: Metal Foil ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP ; Resistance Range: 10000 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 0.2000 ±ppm/°C ; Power Rating: 0.1500.

475MKP275KHG : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 4.7 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 4.7 microF ; Capacitance Tolerance: 10 (+/- %) ; Mounting Style: Through Hole ; Operating.

92A1A-A28-A05L : RES,TAPPED,CERMET,100 OHMS,10% +/-TOL,-150,150PPM TC,6363 CASE. s: Potentiometer Type: Standard Potentiometer ; Standards and Certifications: RoHS.

0-C     D-L     M-R     S-Z