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Part: BAV99S
Category:
Discrete
-> Diodes & Rectifiers
-> Switching Diodes
Description: BAV99S; High-speed Switching Diode Array;; Package: SOT363 (UMT6)
Company: Philips Semiconductors
Datasheet: Download BAV99S datasheet File size : 65 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BAV99S High-speed switching diode array
Product specification Supersedes data of 2001 Mar 02 2001 May 14
Philips Semiconductors
Product specification
High-speed switching diode array
FEATURES · Small plastic SMD package · High switching speed · Two electrically isolated series configuration arrays · Low capacitance. APPLICATIONS · General purpose switching in e.g. surface mounted circuits. · Rail to rail (ESD) protection.
6 5 4 6 5
BAV99S
PINNING PIN 1 2 3 4 5 6 anode (a1) cathode (k2) cathode (k3)/anode (a4) anode (a3) cathode (k4) cathode (k1)/anode (a2) DESCRIPTION
DESCRIPTION The BAV99S consists of four single die high speed switching diodes in two electrically isolated series configurations, encapsulated in the small SMD SC-88 (SOT363) plastic package.
4
1 Top view
2
3
MSA370
1
2
3
MBL211
Marking code: K1.
Fig.1
Simplified outline (SC-88; SOT363) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Solder points at pins: 2, 3, 5 and 6. total power dissipation storage temperature junction temperature Ts 85 °C; note 1 - - - - -65 -65 4.5 1 0.5 250 +150 +150 A A A mW °C °C - - - - 85 75 200 450 V V mA mA PARAMETER CONDITIONS MIN. MAX. UNIT
2001 May 14
2
Philips Semiconductors
Product specification
High-speed switching diode array
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 75 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd trr Vfr diode capacitance reverse recovery time forward recovery voltage VR = 0; f = 1 MHz; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched to IF = 10 mA; tr = 20 ns; see Fig.8 1 30 50 1.5 4 1.75 715 855 1 1.25 PARAMETER CONDITIONS
BAV99S
MAX.
UNIT
mV mV V V µA µA µA pF ns V
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Solder points at pins: 2, 3, 5 and 6. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 260 UNIT K/W
2001 May 14
3
Philips Semiconductors
Product specification
High-speed switching diode array
GRAPHICAL DATA
BAV99S
handbook, halfpage
250
MGW102
handbook, halfpage
300
MBG382
I Fmax (mA)
200
IF (mA)
(1) (2) (3)
200 150
100 100 50
0 0 50 100 Ts (°C) 150
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of soldering point temperature.
Fig.3
Forward current as a function of forward voltage.
handbook, full pagewidth
10
MGW103
I FSM (A)
1
10 -1 1 10
10 2
103
t p (µs)
104
Based on square wave currents. Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2001 May 14
4
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
105 IR (nA) 10
4
MGA884
handbook, halfpage
0.8
MBG446
Cd (pF) V R = 75 V 0.6
103
max
75 V 0.4
10
2
25 V 0.2 typ typ
10
0
100
T j ( o C)
200
0 0 4 8 12 VR (V) 16
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
2001 May 14
5
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