Details, datasheet, quote on part number: BAW101
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionBAW101; High Voltage Double Diode;; Package: SOT143B
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BAW101 datasheet
Cross ref.Similar parts: BAW 101 E6327, BAS21DW5T1G, LM78L05ACZ, LM78L15ACZ, BAV23, BAV23.215, BAW101 E6327, BAW101E6327
Find where to buy


Features, Applications

FEATURES Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V Electrically insulated diodes. APPLICATIONS High voltage switching Automotive Communication. DESCRIPTION The is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT143B plastic SMD package.

MARKING TYPE NUMBER BAW101 Note = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. MARKING AB Fig.1 Simplified outline (SOT143B) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR VRRM IF IFRM IFSM Ptot Tstg Tj Tamb Note 1. Device mounted an FR4 printed-circuit board, cathode-lead mounting pad 1 cm2. ELECTRICAL CHARACTERISTICS 25 C unless otherwise specified. SYMBOL Per diode VBR(R) VF IR trr Cd Note 1. Pulse test: pulse width = 300 s; = 0.02. reverse breakdown voltage forward voltage reverse current reverse recovery time diode capacitance = 100 mA; note 250 V; Tamb 150 C PARAMETER CONDITIONS MIN. continuous reverse voltage series connection repetitive peak reverse voltage series connection continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; 25 C prior to surge; 1 s total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 25 C; note 1 single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 PARAMETER CONDITIONS MIN.


Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BAW101S BAW101S; High Voltage Double Diode;; Package: SOT363 (UMT6)
BAW156 BAW156; Low-leakage Double Diode;; Package: SOT23 (SST3)
BAW56 BAW56; High-speed Double Diode;; Package: SOT23 (SST3)
BAW56S BAW56S; High-speed Double Diode Array;; Package: SOT363 (UMT6)
BAW56T BAW56T; High-speed Double Diode;; Package: SOT416 (EMT3, SMPAK)
BAW56W BAW56W; High-speed Double Diode;; Package: SOT323 (UMT3, CMPAK)
BAW62 BAW62; High-speed Diode;; Package: SOD27 (DO-35, SC-40)
BAX12 Controlled Avalanche Diode
BAX14 General Purpose Diode
BAY80 General Purpose Diode
BB119 BB119; Variable Capacitance Diode
BB130 BB130; Am Variable Capacitance Diode
BB131 BB131; VHF Variable Capacitance Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
BB132 BB132; VHF Variable Capacitance Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
BB133 BB133; VHF Variable Capacitance Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
Same catergory

1N4009 : Ultra High Speed Diodes.

1SS293 : Toshiba Diode Silicon Epitaxial Schottky Barrier Type.

2N5320 : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 75V ;; IC(cont) = 2A ;; HFE(min) = 30 ;; HFE(max) = 120 ;; @ Vce/ic = 4V / 500mA ;; FT = 50MHz ;; PD = 10W.

2SK3380 : Power Small Signal Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

BFW44CSM : Screening Options Available = ;; Polarity = PNP ;; Package = LCC1 ;; Vceo = 150V ;; IC(cont) = 0.05A ;; HFE(min) = 40 ;; HFE(max) = - ;; @ Vce/ic = 10V / 10mA ;; FT = 60MHz ;; PD = 0.4W.

BUX43 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 325V ;; IC(cont) = 10A ;; HFE(min) = 15 ;; HFE(max) = 60 ;; @ Vce/ic = 4V / 3A ;; FT = 8MHz ;; PD = 120W.

DF06S : 1.5A Bridge Rectifier. 005S Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, = 40C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 140 200 *These ratings are limiting values above which the serviceability of any semiconductor.

FMMV109 : Hyperabrupt Varactor Diode. PARAMETER Power Dissipation T amb=25C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE to +150 UNIT mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Reverse current Series Inductance Diode Capacitance Temperature Coefficient Case Capacitance SYMBOL V BR MIN. 30 TYP. MAX.

IRFP350FI : Transistor MOSFET.

IXFT26N60 : HiperFET (tm) Power MOSFETs: 600v, 26a. N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight mm (0.063 in) from case for 10 s Mounting torque 1.13/10 6 Test Conditions to 150C; RGS 1 MW Continuous Transient = 25C, Chip capability = 25C, pulse width limited by TJM IS IDM, di/dt 100 A/ms, VDD VDSS,.

LH1505AACTR : . Two Independent Relays Current Limit Protection l/O Isolation, 5300 VRMS Typical RON 15 Load Voltage 350 V Load Current 120 mA High Surge Capability Linear, AC/DC Operation Clean Bounce Free Switching Low Power Consumption High Reliability Monolithic Receptor SMD Lead Available on Tape and Reel Flammability; UL94,V AGENCY APPROVALS UL File No. E52744.

MBR735 : 5 to 100 Amp. Schottky Rectifier 7.5 Amp. IF(AV) VRRM IFSM 5 s sine @ 7.5 Apk, = 125C range Rectangular waveform V C A The MBR7. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 150 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes,.

STF3HNK90Z : High Voltage. N-channel 900V - 3.5OHM - 3A - TO-220/TO-220FP Zener-protected Supermesh Power MOSFET.

STAC2932B : Transistors, Radio Frequency RF power transistors HF/VHF/UHF N-channel MOSFETs.

06031A0R5BAJ2A : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.0000005 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 5.00E-7 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

CDRH4D11NP-100MB : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.2970 ohms ; Rated.

ETC7-1T-1 : 50 MHz - 250 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -20 to 85 C (-4 to 185 F).

2SSL20L : 2 A, 20 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: SOD-123, ROHS COMPLIANT, PLASTIC, SOD-123FL, 2 PIN ; Number of Diodes: 1 ; VRRM: 20 volts ; IF: 2000 mA ; RoHS Compliant: RoHS.

30R300 : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, 0.02 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, LEAD FREE ; Resistance Range: 0.0200 ohms ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards and Certifications: RoHS.

0-C     D-L     M-R     S-Z