Details, datasheet, quote on part number: BAW101S
PartBAW101S
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionBAW101S; High Voltage Double Diode;; Package: SOT363 (UMT6)
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BAW101S datasheet
Cross ref.Similar parts: BAS21DW
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Features, Applications

FEATURES Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V Electrically insulated diodes. APPLICATIONS High voltage switching Automotive Communication. DESCRIPTION The is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. MARKING TYPE NUMBER BAW101S Note = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. Fig.1 MARKING CODE(1) K2

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR VRRM IF IFRM IFSM Ptot Tstg Tj Tamb Note 1. Device mounted an FR4 printed-circuit board, cathode-lead mounting pad 1 cm2. ELECTRICAL CHARACTERISTICS 25 C unless otherwise specified. SYMBOL Per diode VBR(R) VF IR trr Cd Note 1. Pulse test: pulse width = 300 s; = 0.02. reverse breakdown voltage forward voltage reverse current reverse recovery time diode capacitance = 100 mA; note 250 V; Tamb 150 C PARAMETER CONDITIONS MIN. continuous reverse voltage series connection repetitive peak reverse voltage series connection continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; 25 C prior to surge; 1 s total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 25 C; note 1 single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 PARAMETER CONDITIONS MIN.


 

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