Details, datasheet, quote on part number: BAW62
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionBAW62; High-speed Diode;; Package: SOD27 (DO-35, SC-40)
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BAW62 datasheet
Cross ref.Similar parts: 1SS352, 1N4448, 1SS118
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Features, Applications

FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 75 V Repetitive peak forward current: max. 450 mA. APPLICATIONS High-speed switching Fast logic applications.

DESCRIPTION The is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; 25 C prior to surge; see ms t=1s Ptot Tstg Tj Note 1. Device mounted an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 C; note mW C see Fig.2; note 1 CONDITIONS MIN. MAX. V mA UNIT

ELECTRICAL CHARACTERISTICS = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see = 100 mA; C IR reverse current see C Cd trr diode capacitance reverse recovery time = 1 MHz; = 0; see Fig.6 when switched from = 10 mA; 100 ; measured = 1 mA; see Fig.7 when switched from = 50 mA; = 20 ns; see Fig.8 CONDITIONS MIN.

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 500 UNIT K/W


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