Details, datasheet, quote on part number: BAW62
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionBAW62; High-speed Diode;; Package: SOD27 (DO-35, SC-40)
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BAW62 datasheet
Cross ref.Similar parts: 1SS352, 1N4448, 1SS118
Find where to buy


Features, Applications

FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 75 V Repetitive peak forward current: max. 450 mA. APPLICATIONS High-speed switching Fast logic applications.

DESCRIPTION The is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; 25 C prior to surge; see ms t=1s Ptot Tstg Tj Note 1. Device mounted an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 C; note mW C see Fig.2; note 1 CONDITIONS MIN. MAX. V mA UNIT

ELECTRICAL CHARACTERISTICS = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see = 100 mA; C IR reverse current see C Cd trr diode capacitance reverse recovery time = 1 MHz; = 0; see Fig.6 when switched from = 10 mA; 100 ; measured = 1 mA; see Fig.7 when switched from = 50 mA; = 20 ns; see Fig.8 CONDITIONS MIN.

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 500 UNIT K/W


Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BAX12 Controlled Avalanche Diode
BAX14 General Purpose Diode
BAY80 General Purpose Diode
BB119 BB119; Variable Capacitance Diode
BB130 BB130; Am Variable Capacitance Diode
BB131 BB131; VHF Variable Capacitance Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
BB132 BB132; VHF Variable Capacitance Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
BB133 BB133; VHF Variable Capacitance Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
BB134 BB134; UHF Variable Capacitance Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
BB135 BB135; UHF Variable Capacitance Diode;; Package: SOD323 (UMD2, I-IEIA, URP)
BB141 BB141; Low-voltage Variable Capacitance Diode;; Package: SOD523 (I-IGIA, UFP)
BB142 BB142; Low-voltage Variable Capacitance Diode;; Package: SOD523 (I-IGIA, UFP)
BB143 BB143; Low-voltage Variable Capacitance Diode;; Package: SOD523 (I-IGIA, UFP)
BB145 BB145; Low-voltage Variable Capacitance Diode;; Package: SOD523 (I-IGIA, UFP)
BB145B BB145B; BB145B-01; Low-voltage Variable Capacitance Diodes;; Package: SOD523 (I-IGIA, UFP)
BB145C BB145C; Low-voltage Variable Capacitance Diode;; Package: SOD523 (I-IGIA, UFP)

74HC4051N : Analog Switches 74HC/HCT4051; 8-channel Analog Multiplexer/demultiplexer;; Package: SOT109-1 (SO16), SOT338-1 (SSOP16), SOT38-4 (DIP16), SOT403-1 (TSSOP16)

AC162834ADGG : 18-bit Registered Driver With Inverted Register Enable And 30ohm Termination Resistors 3-state

BZX79-A11 : BZX79 Series; Voltage Regulator Diodes

N74F350D : 4-bit Shifter

P83C51RD+5N : 80c51 8-bit Microcontroller Family 8k.64k/256.1k Otp/rom/romless, Low Voltage 2.7v.5.5v, Low Power, High Speed 33 MHZ

PLS100F : Fuse-based FPGA/PAL Programmable Logic Arrays

SA702 : SA702; Divide By: 64/65/72 Triple Modulus Low Power Ecl Prescaler

SC28L194 : SC28L194; Quad Uart For 3.3V And 5V Supply Voltage

TDA5632M/C1 : TDA5632; TDA5633; 9 V VHF And UHF Mixers/oscillators For TV And VCR Cable Tuners;; Package: SOT266-1 (SSOP20)

74AUP1G332GW-G : The 74AUP1G332 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This d

Same catergory

2N4400 : Amplifier. NPN General Purpose Amplifier. This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

BAV99 : Small Signal. Dual Surface Mount Switching Diode.

CM1000HA-28H : Type = Igbt Module ;; Voltage = 1400V ;; Current = 1000A ;; Circuit Configuration = Single ;; Recommended For Designs = ;; Switching Loss Curves =.

GI750thruGI758 : High Current Plastic Rectifier. Plastic package has Underwriters Laboratories Flammability Classification 94V-0 High forward current capability Diffused junction Construction utilizes void-free molded plastic technique High surge current capability High temperature soldering guaranteed: 250C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Case: Void-free molded plastic.

MS1510 : uWave Wideband. RF NPN Transistor. The 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR at rated operating conditions. IMPORTANT: For the most current data, consult MICROSEMI's website: 470 MHz 12.5.

PBYR7020WT : Rectifier Diodes Schottky Barrier. Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR7025WT series is supplied in the conventional leaded SOT429.

PZTA13 : NPN Silicon Darlington Transistor. For general AF applications High collector current High current gain Complementary types: PZTA63, PZTA64 (PNP) Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, 124 C Junction temperature Storage temperature Thermal Resistance Junction.

05002180CJMB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000018 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.80E-5 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

BB814-1-V-GH-08 : 44.25 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE. s: Arrangement: Common Catode ; Diode Type: VARIABLE CAPACITANCE DIODE ; VBR: 18 volts ; CT: 2.05 to 44.25 pF ; Package: GREEN PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

CT036 : CURRENT TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: CURRENT TRANSFORMER ; Operating Temperature: -20 to 70 C (-4 to 158 F).

MPH3 : RESISTOR, METAL GLAZE/THICK FILM, 3 W, 0.1; 0.5; 1; 2; 5 %, 10; 15 ppm, 0.001 ohm - 10 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Operating Temperature: -40 to 130 C (-40 to 266 F).


RLAQ16HB253G : RESISTOR, NETWORK, FILM, R-2R LADDER, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), QSOP ; Tolerance: 2 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 0.1000 watts (1.34E-4 HP) ; Number of Resistors:.

TDFZ : CAPACITOR, CERAMIC, CHASSIS MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -55 to 100 C (-67 to 212 F).

16MCZ100020CA10X16 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 1000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Leakage Current: 480 microamps ; ESR: 12.5 milliohms ; Mounting Style: Through Hole ; Operating.

0-C     D-L     M-R     S-Z