Details, datasheet, quote on part number: BB212
PartBB212
CategoryDiscrete => Diodes & Rectifiers => Protection
DescriptionBB212; Am Variable Capacitance Double Diode
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BB212 datasheet
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Features, Applications

Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03

FEATURES Leaded plastic package C8: 19 pF; ratio: 29. APPLICATIONS Electronic tuning in AM radio applications VCO. DESCRIPTION The is a variable capacitance double diode with a common cathode, fabricated in planar technology, and encapsulated in the TO-92 variant leaded plastic package.

PINNING PIN 2 3 anode (a1) common cathode anode (a2) DESCRIPTION

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature operating junction temperature mA C PARAMETER MIN. MAX. UNIT

ELECTRICAL CHARACTERISTICS = 25 C; unless otherwise specified. SYMBOL Per diode rs Cd reverse current diode series resistance diode capacitance 10 V; see = 85 C; see = 500 MHz; note 1 see Figs 2 and = 1 MHz = 1 MHz = 1 MHz = 1 MHz 0.5V ) --------------------C 8V ) Note VR is the value at which = 500 pF. MATCHING PROPERTIES The capacitance of the two diodes in their common package may differ within certain limits. The total, relative capacitance difference between the two diodes in one package may be found in Fig.5. The anode or a2 with the higher capacitance V, is identified by a white dot. BASIC TOLERANCE The relative deviation of the capacitance value V is maximum 0.5V 0.5 ------------------------------------------------------------C = <3.5% ADDITIONAL TOLERANCE (see Fig.5) capacitance ratio = 1 MHz PARAMETER CONDITIONS MIN. TYP.


 

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