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Part: BB804
Category:
Discrete
-> Diodes & Rectifiers
-> Varicap Diodes
Description: BB804; VHF Variable Capacitance Double Diode;; Package: SOT23 (SST3)
Company: Philips Semiconductors
Datasheet: Download BB804 datasheet File size : 142 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D088
BB804 VHF variable capacitance double diode
Product specification Supersedes data of 1996 May 03 1998 Nov 25
Philips Semiconductors
Product specification
VHF variable capacitance double diode
FEATURES · Selected capacitance range · Small plastic SMD package · C8: 26 pF; ratio: 1.7 · Low series resistance. APPLICATIONS · Electronic tuning in FM radio applications. DESCRIPTION The BB804 is a variable capacitance double diode with a common cathode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package.
handbook, halfpage
BB804
PINNING
MARKING TYPE NUMBER BB804 BB804W CODE SF5 SF2
PIN 1 2 3
DESCRIPTION anode (a1) anode (a2) common cathode
3 3 1 2
1
2
MAM169
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature operating junction temperature - - -55 -55 18 50 +150 +125 V mA °C °C PARAMETER MIN. MAX. UNIT
1998 Nov 25
2
Philips Semiconductors
Product specification
VHF variable capacitance double diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode IR rs Cd reverse current diode series resistance diode capacitance capacitance ratio VR = 16 V; see Fig.3 VR = 16 V; Tj = 60 °C; see Fig.3 f = 100 MHz; note 1 VR = 2 V; f = 1 MHz; see Figs 2 and 4 VR = 2 V; f = 1 MHz; white 2; see Figs 2 and 4 Cd ( 2 V) ----------------Cd ( 8 V) Note 1. VR is the value at which Cd = 38 pF. f = 1 MHz - - - 42 44 1.65 - - 0.2 - - - 20 PARAMETER CONDITIONS MIN. TYP.
BB804
MAX.
UNIT
nA nA pF pF
200 - 46.5 45.5 1.75
1998 Nov 25
3
Philips Semiconductors
Product specification
VHF variable capacitance double diode
GRAPHICAL DATA
75
BB804
MGC815
handbook, full pagewidth
Cd (pF)
50
25
0 10 -1 f = 1 MHz; Tamb = 25 °C.
1
VR (V)
10
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10 3 handbook, halfpage IR (nA)
MGC810
10 3 handbook, halfpage
MLC815
TC d (K-1)
102
10 4
10
0
20
40
60
80 Tj ( C)
o
100
10 5 10 1
1
10
VR (V)
102
Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values.
Temperature coefficient of diode capacitance as a function of reverse voltage; typical values.
1998 Nov 25
4
Philips Semiconductors
Product specification
VHF variable capacitance double diode
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BB804
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1998 Nov 25
5
Others parts begin by bb
BB-1 BB-2 BB-3
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