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Part: BBZA420A
Category:
Discrete
-> Diodes & Rectifiers
-> Protection
Description: Quadruple Esd Transient Voltage Suppresser
Company: Philips Semiconductors
Datasheet: Download BBZA420A datasheet File size : 142 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
BZA420A Quadruple ESD transient voltage suppressor
Product specification Supersedes data of 1998 Oct 30 1999 May 20
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
FEATURES · ESD rating >8 kV, according to IEC1000-4-2 · SOT457 surface mount package · Common anode configuration · Non-clamping range -0.5 to 20 V · Maximum reverse peak power dissipation: 19.6 W at tp = 1 ms · Maximum clamping voltage at peak pulse current: 28 V at IZSM = 0.7 A. APPLICATIONS · Computers and peripherals · Audio and video equipment · Communication systems · Medical equipment.
1 2 3
MAM357
BZA420A
PINNING PIN 1 2 3 4 5 6 cathode 1 common cathode 2 cathode 3 common cathode 4 DESCRIPTION
handbook, halfpage 6
5
4 1 3 4 6 2 5
DESCRIPTION Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 20 V level.
Top view
Marking code: Z0.
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode IZ IF IFSM IZSM Ptot PZSM Tstg Tj Notes 1. Ts is the temperature at the soldering point of the anode pin. 2. DC working current limited by Ptot max. working current continuous forward current non-repetitive peak forward current non-repetitive peak reverse current total power dissipation Ts = 60 °C; note 1 Ts = 60 °C tp = 1 ms; square pulse tp = 1 ms; square pulse; see Fig.2 Ts = 60 °C; see Fig.3 - - - - - - -65 -65 note 2 100 3.75 0.7 720 19.6 +150 +150 mA mA A A mW W °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
non repetitive peak reverse power square pulse; tp = 1 ms; see Fig.4 dissipation storage temperature junction temperature
1999 May 20
2
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS one or more diodes loaded
BZA420A
VALUE 125
UNIT K/W
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VZ VF VZSM IR rdif SZ Cd working voltage forward voltage reverse current differential resistance temperature coefficient of working voltage diode capacitance IZ = 1 mA IF = 200 mA VR = 15 V IZ = 1 mA IZ = 5 mA see Fig.5 VR = 0; f = 1 MHz - - - 48 14 pF pF VR = 15 V; f = 1 MHz - 19 - - - - - 20 - - - - 16.2 21 1.3 28 100 125 - V V V nA mV/K PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
non-repetitive peak reverse voltage IZSM = 0.7 A; tp = 1 ms
1999 May 20
3
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
BZA420A
handbook, halfpage
10
MDA197
handbook, halfpage
1000 Ptot
MDA198
IZSM (A)
(mW) 800
600 1 400
200
10-1 10-1
1
tp (ms)
10
0 0 50 100 150 Ts (oC) 200
All diodes loaded.
Fig.2
Maximum non-repetitive peak reverse current as a function of pulse time.
Fig.3 Power derating curve.
102 handbook, halfpage
MDA199
handbook, halfpage
50 Cd
MDA200
PZSM (W)
(pF) 40
30 10 20
10
1 10-1
1
tp (ms)
10
0 0 5 10 VR (V) 15
PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM.
Tj = 25 °C; f = 1 MHz.
Fig.4
Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse).
Fig.5
Diode capacitance as a function of reverse voltage; typical values.
1999 May 20
4
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
BZA420A
handbook, full pagewidth
ESD TESTER RZ CZ
450
RG 223/U 50 coax
10× ATTENUATOR note 1
DIGITIZING OSCILLOSCOPE
50
Note 1: attenuator is only used for open socket high voltage measurements IEC 1000-4-2 network CZ = 150 pF; RZ = 330 1/4 BZA420A
vertical scale = 100 V/Div horizontal scale = 50 ns/Div
vertical scale = 10 V/Div horizontal scale = 50 ns/Div
GND
GND
unclamped +1 kV ESD voltage waveform (IEC 1000-4-2 network)
clamped +1 kV ESD voltage waveform (IEC 1000-4-2 network)
GND
GND
vertical scale = 100 V/Div horizontal scale = 50 ns/Div unclamped -1 kV ESD voltage waveform (IEC 1000-4-2 network)
vertical scale = 10 V/Div horizontal scale = 50 ns/Div clamped -1 kV ESD voltage waveform (IEC 1000-4-2 network)
MBK386
Fig.6 ESD clamping test set-up and waveforms.
1999 May 20
5
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