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Part: BC556
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BC556; BC557; PNP General Purpose Transistors;; Package: SOT54 (SPT, E-1)
Company: Philips Semiconductors
Datasheet: Download BC556 datasheet File size : 324 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC556; BC557 PNP general purpose transistors
Product specification Supersedes data of 1997 Mar 27 1999 Apr 15
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES · Low current (max. 100 mA) · Low voltage (max. 65 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collector
BC556; BC557
DESCRIPTION
1 handbook, halfpage
2 3
3 2 1
MAM281
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC556 BC557 VCEO collector-emitter voltage BC556 BC557 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C open collector open base - - - - - - - -65 - -65 -65 -45 -5 -100 -200 -200 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - -80 -50 V V MIN. MAX. UNIT
1999 Apr 15
2
Philips Semiconductors
Product specification
PNP general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC556 BC557 BC556A BC556B; BC557B BC557C VCEsat VBEsat VBE Cc Ce fT F Notes 1. VBEsat decreases by about -1.7 mV/K with increasing temperature. 2. VBE decreases by about -2 mV/K with increasing temperature. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA IC = -10 mA; IB = -0.5 mA; note 1 IC = -100 mA; IB = -5 mA; note 1 IC = -2 mA; VCE = -5 V; note 2 IC = -10 mA; VCE = -5 V; note 2 IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -0.5 V; f = 1 MHz IC = -200 µA; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz CONDITIONS IE = 0; VCB = -30 V IE = 0; VCB = -30 V; Tj = 150 °C IC = 0; VEB = -5 V IC = -2 mA; VCE = -5 V; see Figs 2, 3 and 4 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
BC556; BC557
VALUE 250
UNIT K/W
MIN. - - - 125 125 125 220 420 - - - - -600 - - - -
TYP. -1 - - - - - - - -60 -180 -750 -930 -650 - 3 10 - 2
MAX. UNIT -15 -4 -100 475 800 250 475 800 -300 -650 - - -750 -820 - - - 10 mV mV mV mV mV mV pF pF MHz dB nA µA nA
IC = -10 mA; VCE = -5 V; f = 100 MHz 100
1999 Apr 15
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557
handbook, full pagewidth
300
MBH726
hFE
200 VCE = -5 V
100
0 -10-1
-1
-10
-102
IC (mA)
-103
BC556A.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
400
MBH727
hFE VCE = -5 V 300
200
100
0 -10-2
-10-1
-1
-10
-102
IC (mA)
-103
BC556B; BC557B.
Fig.3 DC current gain; typical values.
1999 Apr 15
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557
handbook, full pagewidth
600
MBH728
hFE 500 VCE = -5 V
400
300
200
100
0 -10-2
-10-1
-1
-10
-102
IC (mA)
-103
BC557C.
Fig.4 DC current gain; typical values.
1999 Apr 15
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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