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Part: BC637
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BC635; BC637; BC639; NPN Medium Power Transistors;; Package: SOT54 (SPT, E-1)
Company: Philips Semiconductors
Datasheet: Download BC637 datasheet File size : 190 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639 NPN medium power transistors
Product specification Supersedes data of 1999 Apr 23 2001 Oct 10
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES · High current (max. 1 A) · Low voltage (max. 80 V). APPLICATIONS · Driver stages of audio/video amplifiers. DESCRIPTION
1 handbook, halfpage
BC635; BC637; BC639
PINNING PIN 1 2 3 base collector emitter DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640.
2 3
2 1 3
MAM259
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO BC635 BC637 BC639 VCEO collector-emitter voltage BC635 BC637 BC639 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C open collector open base - - - - - - - - -65 - -65 45 60 80 5 1 1.5 200 0.83 +150 150 +150 V V V V A A mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - - 45 60 100 V V V MIN. MAX. UNIT
2001 Oct 10
2
Philips Semiconductors
Product specification
NPN medium power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V PARAMETER thermal resistance from junction to ambient
BC635; BC637; BC639
CONDITIONS note 1
VALUE 150
UNIT K/W
MIN. - - - 63 63 40 63 100
MAX. 100 10 100 - 250 - 160 250 500 1 - 1.6
UNIT nA µA nA
IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V VCE = 2 V; see Fig.2 IC = 5 mA IC = 150 mA IC = 500 mA DC current gain BC639-10 BC635-16; BC637-16; BC639-16 VCEsat VBE fT h FE1 ----------h FE2 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementar y pairs IC = 500 mA; IB = 50 mA IC = 500 mA; VCE = 2 V IC = 50 mA; VCE = 5 V; f = 100 MHz IC = 150 mA; VCE = 2 V IC = 150 mA; VCE = 2 V; see Fig.2
- - 100 -
mV V MHz
2001 Oct 10
3
Philips Semiconductors
Product specification
NPN medium power transistors
BC635; BC637; BC639
handbook, full pagewidth
160
MBH729
hFE 120
VCE = 2 V
80
40
0 10-1
1
10
102
IC (mA)
103
Fig.2 DC current gain; typical values.
2001 Oct 10
4
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
BC635; BC637; BC639
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
2001 Oct 10
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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