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Part: BC846A
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BC846; BC847; BC848; NPN General Purpose Transistors;; Package: SOT23 (SST3)
Company: Philips Semiconductors
Datasheet: Download BC846A datasheet File size : 65 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC846; BC847; BC848 NPN general purpose transistors
Product specification Supersedes data of 1999 Apr 23 2002 Feb 04
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES · Low current (max. 100 mA) · Low voltage (max. 65 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858.
handbook, halfpage
BC846; BC847; BC848
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3
MARKING TYPE NUMBER BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848B Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. MARKING CODE(1) 1D* 1A* 1B* 1H* 1E* 1F* 1G* 1K* Fig.1 Simplified outline (SOT23) and symbol.
Top view
1 2
1
2
MAM255
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN general purpose transistors
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC846 BC847 BC848 VCEO collector-emitter voltage BC846 BC847 BC848 VEBO emitter-base voltage BC846; BC847 BC848 IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open collector open base PARAMETER collector-base voltage CONDITIONS open emitter
BC846; BC847; BC848
MIN. - - - - - - - - - - - - -65 - -65
MAX. 80 50 30 65 45 30 6 5 100 200 200 250 +150 150 +150 V V V V V V V V
UNIT
mA mA mA mW °C °C °C
VALUE 500
UNIT K/W
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC846A; BC847A BC846B; BC847B; BC848B BC847C DC current gain BC846 BC847 BC846A; BC847A BC846B; BC847B; BC848B BC847C VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBE Cc fT F base-emitter voltage collector capacitance transition frequency noise figure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz IC = 2 mA; VCE = 5 V VEB = 5 V; IC = 0 IC = 10 µA; VCE = 5 V
BC846; BC847; BC848
MIN. - - - - - - 110 110 110 200 420 - - - - 580 - - 100 -
TYP. - - - 90 150 270 - - 180 290 520 90 200 700 900 660 - 2.5 - 2
MAX. 15 5 100 - - - 450 800 220 450 800 250 600 - - 700 770 - - 10
UNIT nA µA nA
mV mV mV mV mV mV pF MHz dB
Note 1. Pulse test: tp 300 µs; 0.02.
2002 Feb 04
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
handbook, halfpage
400
MGT723
hanVbook, halfpage d
hFE
(1)
1200 BE (mV) 1000
MGT724
300 800
(1)
(2)
200
(2)
600
(3)
(3)
400
100 200
0 10-1
1
10
102 I C (mA)
103
0 10-1
1
10
102 I C (mA)
103
BC846A; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
BC846A; VCE = 5 V. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV)
MGT725
handbook, halfpage
1200 VBEsat (mV) 1000
MGT726
(1)
800
(2)
102
(1) (2) (3)
600
(3)
400
200
10 10-1
1
10
102 I C (mA)
103
0 10-1
1
10
102 I C (mA)
103
BC846A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
BC846A; IC/IB = 10. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2002 Feb 04
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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