|
|
Part: BC847BT
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BC846T; BC847T Series; NPN General Purpose Transistors;; Package: SOT416 (EMT3, SMPAK)
Company: Philips Semiconductors
Datasheet: Download BC847BT datasheet File size : 58 kB
Request For quote: Find where to buy BC847BT
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC846T; BC847T series NPN general purpose transistors
Product specification Supersedes data of 1999 Apr 26 2000 Nov 15
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES · Low current (max. 100 mA) · Low voltage (max. 65 V). APPLICATIONS · General purpose switching and amplification, especially in portable equipment. DESCRIPTION NPN general purpose transistor in an SC-75 (SOT416) plastic package. PNP complements: BC856T; BC857T series. MARKING TYPE NUMBER BC846AT BC846BT BC847AT BC847BT BC847CT MARKING CODE 1A 1B 1E 1F 1G Fig.1
handbook, halfpage
BC846T; BC847T series
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1
1 Top view
2
2
MAM348
Simplified outline (SC-75; SOT416) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage BC846AT; BC846BT BC847AT; BC847BT; BC847CT VCEO collector-emitter voltage BC846AT; BC846BT BC847AT; BC847BT; BC847CT VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open collector open base - - - - - - - -65 - -65 65 45 5 100 200 100 150 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter - - 80 50 V V MIN. MAX. UNIT
2000 Nov 15
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS PARAMETER thermal resistance from junction to ambient
BC846T; BC847T series
CONDITIONS in free air; note 1
VALUE 833
UNIT K/W
MIN. - - - 110 200 420 - - - - - - - - - - -
TYP.
MAX. 15 5 100 220 450 800 200 400 700 770 1.5 - - 10
UNIT nA µA nA
collector-base cut-off current VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C emitter cut-off current DC current gain BC846AT; BC847AT BC846BT; BC847BT BC847CT VEB = 5 V; IC = 0 VCE = 5 V; IC = 2 mA
VCEsat VBE Cc Ce fT F Note
collector-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure
IC = 10 mA; IB = 0.5 mA; IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; f = 1 MHz; IE = ie = 0 VEB = 0.5 V; f = 1 MHz; IC = ic = 0 IC = 10 mA; VCE = 5 V; f = 100 MHz VCE = 5 V; IC = 200 µA; RS = 2 k; f = 1 kHz; B = 200 Hz
- - 580 - - - 100 -
mV mV mV mV pF pF MHz dB
11 - -
1. Pulse test: tp 300 µs; 0.02.
2000 Nov 15
3
Philips Semiconductors
Product specification
NPN general purpose transistors
GRAPHICAL INFORMATION BC847AT
MGT723
BC846T; BC847T series
handbook, halfpage
400
hanVbook, halfpage d
hFE
(1)
1200 BE (mV) 1000
MGT724
300
(1)
800
(2) (2)
200
600
(3)
(3)
400
100 200
0 10-1
1
10
102 I C (mA)
103
0 10-1 VCE = 5 V. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
1
10
102 I C (mA)
103
VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
Fig.3 Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV)
MGT725
handbook, halfpage
1200 VBEsat (mV) 1000
MGT726
(1)
800
(2)
102
(1) (2) (3)
600
(3)
400
200
10 10-1
1
10
102 I C (mA)
103
0 10-1
1
10
102 I C (mA)
103
IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
IC/IB = 10. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2000 Nov 15
4
Philips Semiconductors
Product specification
NPN general purpose transistors
GRAPHICAL INFORMATION BC847BT
MGT727
BC846T; BC847T series
handbook, halfpage
600
handbook, halfpage
(1)
hFE 500
1200 VBE (mV) 1000
MGT728
(1)
400
(2)
800
(2)
300
600
(3)
200
(3)
400
100
200
0 10-1
1
10
102 I C (mA)
103
0 10-2 VCE = 5 V.
10-1
1
10
102 103 I C (mA)
VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
(1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.7 Fig.6 DC current gain; typical values.
Base-emitter voltage as a function of collector current; typical values.
104 handbook, halfpage VCEsat (mV) 103
MGT729
handbook, halfpage
1200 VBEsat (mV) 1000
MGT730
(1)
800
(2)
600
(3)
102
(1)
400
(3) (2)
200
10 10-1
1
10
102 I C (mA)
103
0 10-1
1
10
102 I C (mA)
103
IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
IC/IB = 10. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.8
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.9
Base-emitter saturation voltage as a function of collector current; typical values.
2000 Nov 15
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
|
|
|
