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Part: BC847BVN
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BC847BVN; Npn/pnp General Purpose Transistor;; Package: SOT666 (SS-Mini)
Company: Philips Semiconductors
Datasheet: Download BC847BVN datasheet File size : 58 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC847BVN NPN/PNP general purpose transistor
Product specification Supersedes data of 2001 Aug 30 2001 Nov 07
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
FEATURES · 300 mW total power dissipation · Very small 1.6 mm x 1.2 mm ultra thin package · Excellent coplanarity due to straight leads · Replaces two SC-75/SC-89 packaged transistors on same PCB area · Reduced required PCB area · Reduced pick and place costs. APPLICATIONS · General purpose switching and amplification · Switch mode power supply complementary MOSFET driver · Complementary driver for audio amplifiers. DESCRIPTION NPN/PNP transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER BC847BVN MARKING CODE 13 Fig.1
1 Top view 2 3
MAM443
BC847BVN
PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
handbook, halfpage 6
5
4
6
5
4
TR2 TR1
1
2
3
Simplified outline (SOT666) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 °C; note 1 - -65 - -65 Tamb 25 °C; note 1 - MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2 total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering is reflow soldering. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - 200 - - - 100 PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416
BC847BVN
UNIT K/W
TYP. - - - - - - 755 - 655 - 11
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity ICBO IEBO hFE VCEsat VBEsat fT VBE Cc Ce VBE Cc Ce Note 1. Pulse test: tp 300 µs; 0.02. collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage collector-emitter saturation voltage transition frequency VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C VEB = 5 V; IC = 0 VCE = 5 V; IC = 2 mA IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 IC = 10 mA; IB = 0.5 mA IC = 10 mA; VCE = 5 V; f = 100 MHz VCE = 5 V; IC = 2 mA VCB = 10 V; IE = Ie = 0; f = 1MHz VEB = 500 mV; IC = Ic = 0; f = 1MHz VCE = -5 V; IC = -2 mA VCB = -10 V; IC = Ic = 0; f = 1MHz VEB = -500 mV; IE = Ie = 0; f = 1MHz 15 5 100 450 100 300 - - 700 1.5 - 750 2.2 - mV mV mV MHz nA µA nA
NPN transistor base-emitter turn-on voltage collector capacitance emitter capacitance 580 - - 600 - - mV pF pF
PNP transistor base-emitter turn-on voltage collector capacitance emitter capacitance 655 - 10 mV pF pF
2001 Nov 07
3
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
handbook, halfpage
(1)
600
MLD703
handbook, halfpage
1200 mV 1000
MLD704
VBE
hFE
(1)
400
(2)
800
(2)
600 200
(3) (3)
400
0 10-1
1
10
102
IC (mA)
103
200 10-2
10-1
1
10
102 103 IC (mA)
TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
TR1 (NPN); VCE = 5 V. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.2
DC current gain as a function of collector current: typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
104 handbook, halfpage VCEsat (mV) 103
MLD705
handbook, halfpage
1200
MLD706
VBEsat (mV) 1000
(1) (2)
800
(3)
600 102
(2) (3) (1)
400
10 10-1
1
10
102
IC (mA)
103
200 10-1
1
10
102
IC (mA)
103
TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
TR1 (NPN); IC/IB = 20. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.4
Collector-emitter saturation voltage as a function of collector current: typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current.
2001 Nov 07
4
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
handbook, halfpage
1000
MLD699
handbook, halfpage
-1200 VBE mV -1000
MLD700
hFE 800
600
(1)
-800
(1)
(2)
400
(2)
-600
200
(3)
-400
(3)
0 -10-2
-10-1
-1
-10
-102 -103 IC (mA)
-200 -10-2
-10-1
-1
-10
-102 -103 IC (mA)
TR2 (PNP); VCE = -5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
TR2 (PNP); VCE = -5 V. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.6
DC current gain as a function of collector current: typical values.
Fig.7
Base-emitter voltage as a function of collector current; typical values.
-104 handbook, halfpage VCEsat (mV) -103
MLD701
handbook, halfpage
-1200 VBEsat (mV) -1000
MLD702
(1) (2)
-800
-102
(2)
(1)
-600
(3)
(3)
-400
-10 -10-1
-1
-10
-102
IC (mA)
-103
-200 -10-1
-1
-10
-102
-103 IC (mA)
TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
TR2 (PNP); IC/IB = 20. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.8
Collector-emitter saturation voltage as a function of collector current: typical values.
Fig.9
Base-emitter saturation voltage as a function of collector current.
2001 Nov 07
5
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