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Part: BC847BW
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BC846W; BC847W; BC848W; NPN General Purpose Transistors;; Package: SOT323 (UMT3, CMPAK)
Company: Philips Semiconductors
Datasheet: Download BC847BW datasheet File size : 58 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC846W; BC847W; BC848W NPN general purpose transistors
Product specification Supersedes data of 1999 Apr 23 2002 Feb 04
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES · Low current (max. 100 mA) · Low voltage (max. 65 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC856W, BC857W and BC858W. MARKING PINNING
BC846W; BC847W; BC848W
PIN 1 2 3 base emitter collector
DESCRIPTION
handbook, halfpage
3
3 1
TYPE NUMBER BC846W BC846AW BC846BW BC847W BC847AW BC847BW BC847CW BC848W Note 1. * = -: made in Hong Kong. * = t: made in Malaysia.
MARKING CODE(1) 1D* 1A* 1B* 1H* 1E* 1F* 1G* 1M* Fig.1 Simplified outline (SOT323; SC70) and symbol.
2
1 Top view 2
MAM062
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN general purpose transistors
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC846W BC847W BC848W VCEO collector-emitter voltage BC846W BC847W BC848W VEBO emitter-base voltage BC846W; BC847W BC848W IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open collector open base PARAMETER collector-base voltage
BC846W; BC847W; BC848W
CONDITIONS open emitter - - - - - - - - - - - Tamb 25 °C; note 1 -
MIN.
MAX. 80 50 30 65 45 30 6 5 100 200 200 200 +150 150 +150 V V V V V V V V
UNIT
mA mA mA mW °C °C °C
-65 - -65
CONDITIONS in free air; note 1
VALUE 625
UNIT K/W
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current
BC846W; BC847W; BC848W
CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C
MIN. - - - - - -
TYP. - - - 90 150 270 - - 180 290 520 90 200 700 900 660 - - - -
MAX. 15 5 100 - - - 450 800 220 450 800 250 600 - - 700 770 3 - 10
UNIT nA µA nA
IEBO hFE
emitter-base cut-off current DC current gain BC846AW; BC847AW BC846BW; BC847BW; BC848BW BC847CW DC current gain BC846W BC847W; BC848W BC846AW; BC847AW BC846BW; BC847BW BC847CW
VEB = 5 V; IC = 0 IC = 10 µA; VCE = 5 V
IC = 2 mA; VCE = 5 V 110 110 110 200 420 IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 - - - - 580 - - 100 -
VCEsat
collector-emitter saturation voltage
mV mV mV mV mV mV pF MHz dB
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1
VBE Cc fT F
base-emitter voltage collector capacitance transition frequency noise figure
IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz
Note 1. Pulse test: tp 300 µs; 0.02.
2002 Feb 04
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
handbook, halfpage
400
MGT723
hanVbook, halfpage d
hFE
(1)
1200 BE (mV) 1000
MGT724
300 800
(1)
(2)
200
(2)
600
(3)
(3)
400
100 200
0 10-1
1
10
102 I C (mA)
103
0 10-1
1
10
102 I C (mA)
103
BC847AW; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
BC847AW; VCE = 5 V. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV)
MGT725
handbook, halfpage
1200 VBEsat (mV) 1000
MGT726
(1)
800
(2)
102
(1) (2) (3)
600
(3)
400
200
10 10-1
1
10
102 I C (mA)
103
0 10-1
1
10
102 I C (mA)
103
BC847AW; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
BC847AW; IC/IB = 10. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2002 Feb 04
5
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