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Part: BC856S
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BC856S; PNP General Purpose Double Transistor;; Package: SOT363 (UMT6)
Company: Philips Semiconductors
Datasheet: Download BC856S datasheet File size : 49 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC856S PNP general purpose double transistor
Product specification 1999 Aug 24
Philips Semiconductors
Product specification
PNP general purpose double transistor
FEATURES · Two transistors in one package · Reduces number of components and board space · No mutual interference between the transistors. APPLICATIONS · General purpose switching and small signal amplification. DESCRIPTION PNP double transistor in an SC-88 (SOT363) plastic six lead package. PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MARKING TYPE NUMBER BC856S
1 Top view 2 3 1
MAM339
BC856S
handbook, halfpage
6 5 4
5
4
6
TR2 TR1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
MARKING CODE 5Ft
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Per device Ptot Note 1. Refer to SC-88 (SOT363) standard mounting conditions. total power dissipation Tamb 25 °C; note 1 - 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C open emitter open base open collector - - - - - -65 - -65 -80 -65 -5 -100 200 +150 150 +150 V V V mA mW °C °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Aug 24
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-88 (SOT363) standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VCEsat VBEsat Cc fT Note 1. Pulse test: tp 300 µs; 0.02. collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IE = 0; VCB = -30 V IE = 0; VCB = -30 V; Tj = 150 °C IC = 0; VEB = -5 V IC = -2 mA; VCE = -5 V IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA; note 1 IC = -10 mA; IB = -0.5 mA IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -5 V; f = 100 MHz - - - 110 - - - - 100 - - - - - - 700 - - PARAMETER CONDITIONS MIN. TYP. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 416
BC856S
UNIT K/W
MAX. -15 -5 -100 - -100 -300 - 2.5 -
UNIT
nA µA nA mV mV mV pF MHz
1999 Aug 24
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
104 handbook, halfpage VCEsat (mV) 103
MCD763
handbook, halfpage
1200
MCD764
VBE (mV) 1000
800
(1)
(2)
600 102
(1)
400
(3) (2) (3)
10 10-1 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
1
10
102
IC (mA)
103
200 10-2 VCE = 5 V.
10-1
1
10
102 103 IC (mA)
(1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.2
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
MCD765
handbook, full pagewidth
500
hFE 400
(1)
300
200
(2)
(3)
100
0 10-2
10-1
1
10
102
IC (mA)
103
VCE = 5 V. (1) Tamb = 150 °C.
(2) Tamb = 25 °C. (3) Tamb = -55 °C.
Fig.4 DC current gain as a function of collector current; typical values.
1999 Aug 24
4
Philips Semiconductors
Product specification
PNP general purpose double transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
BC856S
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Aug 24
5
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