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Part: BC857
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BC856; BC857; BC858; PNP General Purpose Transistors;; Package: SOT23 (SST3)
Company: Philips Semiconductors
Datasheet: Download BC857 datasheet File size : 66 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC856; BC857; BC858 PNP general purpose transistors
Product specification Supersedes data of 2002 Feb 04 2003 Apr 09
Philips Semiconductors
Product specification
PNP general purpose transistors
FEATURES · Low current (max. 100 mA) · Low voltage (max. 65 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING TYPE NUMBER BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858B Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. MARKING CODE(1) 3D* 3A* 3B* 3H* 3E* 3F* 3G* 3K* Fig.1
Top view
BC856; BC857; BC858
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
handbook, halfpage
3 3 1 2 1 2
MAM256
Simplified outline (SOT23) and symbol.
2003 Apr 09
2
Philips Semiconductors
Product specification
PNP general purpose transistors
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO BC856 BC857 BC858 VCEO collector-emitter voltage BC856 BC857 BC858 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board, standard footprint. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open collector open base PARAMETER collector-base voltage CONDITIONS open emitter
BC856; BC857; BC858
MIN. - - - - - - - - - - - -65 - -65
MAX. -80 -50 -30 -65 -45 -30 -5 -100 -200 -200 250 +150 150 +150 V V V V V V V
UNIT
mA mA mA mW °C °C °C
VALUE 500
UNIT K/W
2003 Apr 09
3
Philips Semiconductors
Product specification
PNP general purpose transistors
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = -30 V; IE = 0 VCB = -30 V; IE = 0; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC856 BC857 BC856A; BC857A BC856B; BC857B; BC858B BC857C VCEsat collector-emitter saturation voltage VEB = -5 V; IC = 0 IC = -2 mA; VCE = -5 V
BC856; BC857; BC858
MIN. - - - 125 125 125 220 420
TYP. -1 - - - - - - - -75 -250 -700 -850 -650 - 4.5 - 2
MAX. -15 -4 -100 475 800 250 475 800 -300 -650 - - -750 -820 - - 10
UNIT nA µA nA
IC = -10 mA; IB = -0.5 mA - IC = -100 mA; IB = -5 mA; - note 1
mV mV mV mV mV mV pF MHz dB
VBEsat
base-emitter saturation voltage
IC = -10 mA; IB = -0.5 mA - IC = -100 mA; IB = -5 mA; - note 1
VBE Cc fT F
base-emitter voltage collector capacitance transition frequency noise figure
IC = -2 mA; VCE = -5 V IC = -10 mA; VCE = -5 V VCB = -10 V; IE = Ie = 0; f = 1 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz IC = -200 µA; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz
-600 - - 100 -
Note 1. Pulse test: tp 300 µs; 0.02.
2003 Apr 09
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC856; BC857; BC858
handbook, halfpage
500
MGT711
handbook, halfpage
hFE 400
(1)
- 1200 VBE (mV) - 1000 - 800
MGT712
(1)
300 - 600 200
(2)
(2)
- 400 100
(3)
(3)
- 200
0 - 10-2
- 10-1
-1
- 10
- 102 - 103 I C (mA)
0 - 10-2
- 10-1
-1
- 10
- 102 - 103 I C (mA)
BC857A; VCE = -5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
BC857A; VCE = -5 V. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
- 104 handbook, halfpage VCEsat (mV) - 103
MGT713
handbook, halfpage
- 1200 VBEsat (mV) - 1000 - 800 - 600
MGT714
(1) (2)
(3)
- 102
(1)
- 400 - 200
(3) (2)
- 10 - 10-1
-1
- 10
- 102 - 103 I C (mA)
0 - 10-1
-1
- 10
- 102 - 103 I C (mA)
BC857A; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = -55 °C.
BC857A; IC/IB = 20. (1) Tamb = -55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2003 Apr 09
5
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