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Part: BDL32
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BDL32; PNP BISS-transistor;; Package: SOT223 (SC-73)
Company: Philips Semiconductors
Datasheet: Download BDL32 datasheet File size : 261 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D087
BDL32 PNP BISS-transistor
Product specification Supersedes data of 1998 Aug 03 1999 Apr 29
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
FEATURES · High current (max. 5 A) · Low voltage (max. 10 V) · Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS · Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package. NPN complement: BDL31.
PINNING PIN 1 2 3 4 base not connected emitter collector DESCRIPTION
handbook, halfpage
4
4 1 3
1 Top view 2 3
MAM373
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -15 -10 -5 -5 -10 -1 1.35 +150 150 +150 V V V A A A W °C °C °C UNIT
1999 Apr 29
2
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -10 V IE = 0; VCB = -10 V; Tj = 150 °C IC = 0; VEB = -5 V VCE = -2 V; note 1 IC = -0.5 A IC = -1 A IC = -3 A IC = -5 A VCE = -1 V; IC = -2 A; note 1 VCEsat collector-emitter saturation voltage note 1 IC = -1 A; IB = -20 mA IC = -2 A; IB = -200 mA IC = -3 A; IB = -60 mA IC = -5 A; IB = -100 mA Cc fT Note 1. Pulse test: tp 300 µs; 0.02. collector capacitance transition frequency IE = ie = 0; VCB = -5 V; f = 1 MHz IC = -500 mA; VCE = -10 V; f = 100 MHz - - - - - 100 -250 -400 -600 -1 150 - mV mV mV V pF MHz 200 180 120 50 120 - - - - - - - - MIN. MAX. -50 -50 -50 UNIT nA µA nA PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 92 10 UNIT K/W K/W
1999 Apr 29
3
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 96-11-11 97-02-28
1999 Apr 29
4
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1999 Apr 29
5
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