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Part: BDP31
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: BDP31; NPN Medium Power Transistor;; Package: SOT223 (SC-73)
Company: Philips Semiconductors
Datasheet: Download BDP31 datasheet File size : 261 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BDP31 NPN medium power transistor
Product specification Supersedes data of 1997 Mar 10 1999 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistor
FEATURES · High current (max. 3 A) · Low voltage (max. 45 V). APPLICATIONS · General purpose medium power applications. DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complement: BDP32.
handbook, halfpage
BDP31
PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION
4
2, 4 1 3
1 Top view 2 3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for the SOT223 in the General Part of associated Handbook". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 70 45 6 3 6 0.5 1.35 +150 150 +150 V V V A A A W °C °C °C UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 91 10
BDP31
UNIT K/W K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for the SOT223 in the General Part of associated Handbook". CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBEsat fT Note 1. Pulse test: tp 300 µs; 0.02. PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency CONDITIONS IE = 0; VCB = 50 V; IE = 0; VCB = 50 V; Tj = 150 °C IC = 0; VEB = 5 V; IC = 0.5 A; VCE = 12 V; note 1; see Fig.2 IC = 2 A; VCE = 1 V; note 1; see Fig.2 IC = 500 mA; IB = 50 mA; note 1 IC = 2 A; IB = 200 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 2 A; IB = 200 mA; note 1 IC = 250 mA; VCE = 5 V; f = 100 MHz - - - 40 20 - - - - 60 MIN. MAX. 50 10 50 - - 300 700 1.2 1.5 - mV mV V V MHz UNIT nA µA nA
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
MGD840
handbook, full pagewidth
80
hFE
60
40
20
0 10-1
1
10
102
103
IC (mA)
104
VCE = 1 V.
Fig.2 DC current gain; typical values.
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN medium power transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BDP31
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 96-11-11 97-02-28
1999 Apr 23
5
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