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Part: BF819

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> High Voltage
         -> NPN

Description: BF819; NPN High-voltage Transistor

Company: Philips Semiconductors

Datasheet: Download BF819 datasheet     File size : 131 kB

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Datasheet text preview:
DISCRETE SEMICONDUCTORS

DATA SHEET

M3D067

BF819 NPN high-voltage transistor
Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1997 Sep 03

Philips Semiconductors

Product specification

NPN high-voltage transistor
FEATURES · Low current (max. 100 mA) · High voltage (max. 250 V). APPLICATIONS · Driver for a line output transistor in colour television receivers.
handbook, halfpage

BF819
PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION

DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package.
3 1 2

123

MAM305

Fig.1

Simplified outline (TO-202; SOT128B) and symbol.

QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cre fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tamb 75 °C IC = 20 mA, VCE = 10 V IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS - - - - 45 - 90 TYP. MAX. 300 250 300 6 - 3.5 - pF MHz V V mA W UNIT

1997 Sep 03

2

Philips Semiconductors

Product specification

NPN high-voltage transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 75 °C Tmb 75 °C CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN. MAX. 300 250 5 100 300 100 1.2 6 +150 150 +150

BF819

UNIT V V V mA mA mA W W °C °C °C

THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air VALUE 62.5 12.5 UNIT K/W K/W

CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cc Cre fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 250 V IE = 0; VCB = 250 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 20 mA; VCE = 10 V IE = ie = 0; VCB = 30 V; f = 1 MHz IC = ic = 0; VCB = 30 V; f = 1 MHz - - - 45 - - - TYP. 5 100 - 11 4.5 3.5 - V pF pF MHz MAX. 50 UNIT nA µA nA

collector-emitter saturation voltage IC = 200 mA; IB = 20 mA

IC = 15 mA; VCE = 10 V; f = 100 MHz 90

1997 Sep 03

3

Philips Semiconductors

Product specification

NPN high-voltage transistor
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line)
E1 P c1

BF819

SOT128B

P1

HE

D

L2

L1

L

1

2
bp e1 e E

3
wM Q A c

0 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.4 bp 0.8 0.6 c 0.65 0.5 c1 0.56 0.46 D 8.6 8.4 E 10.1 9.9 E1 10.4 10.0 e 5.08

5 scale e1 2.54

10 mm

HE 24.2 23.8

L 13.3 12.2

L1 2.4 2.0

L2(1) max 2.5

P 3.8 3.6

P1 3.9 3.7

Q 1.7 1.5

w 0.25

Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B REFERENCES IEC JEDEC TO-202 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28

1997 Sep 03

4

Philips Semiconductors

Product specification

NPN high-voltage transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values

BF819

This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1997 Sep 03

5




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