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Part: BF820W
Category:
Discrete
-> Transistors
-> Bipolar
-> High Voltage
Description: BF820W; NPN High-voltage Transistor;; Package: SOT323 (UMT3, CMPAK)
Company: Philips Semiconductors
Datasheet: Download BF820W datasheet File size : 131 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
e
M3D102
BF820W NPN high-voltage transistor
Product specification Supersedes data of 1997 Sep 03 2003 Sep 09
Philips Semiconductors
Product specification
NPN high-voltage transistor
FEATURES · Low current (max. 50 mA) · High voltage (max. 300 V). APPLICATIONS · Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. MARKING TYPE NUMBER BF820W Notes 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cre fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tamb 25 °C IC = 25 mA; VCE = 20 V IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS - - - - 50 - 60 MIN. MARKING CODE(1) 1V*
1 Top view 2
MAM062
BF820W
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
handbook, halfpage
3
3 1 2
Fig.1 Simplified outline (SOT323) and symbol.
MAX. 300 300 100 200 - 1.6 - V V
UNIT
mA mW pF MHz
2003 Sep 09
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Philips Semiconductors
Product specification
NPN high-voltage transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN.
BF820W
MAX. 300 300 5 50 100 50 200 +150 150 +150
UNIT V V V mA mA mA mW °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 625 UNIT K/W
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cre fT Note 1. Pulse test: tp 300 µs; 0.02. PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA; note 1 IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz - - - 50 - - 60 MIN. MAX. 10 10 50 - 600 1.6 - mV pF MHz UNIT nA µA nA
2003 Sep 09
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Philips Semiconductors
Product specification
NPN high-voltage transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BF820W
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2003 Sep 09
4
Philips Semiconductors
Product specification
NPN high-voltage transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BF820W
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementar y data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Sep 09
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