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Part: BFS505
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: BFS505; NPN 9 GHZ Wideband Transistor;; Package: SOT323 (UMT3, CMPAK)
Company: Philips Semiconductors
Datasheet: Download BFS505 datasheet File size : 43 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFS505 NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES · Low current consumption · High power gain · Low noise figure · High transition frequency · Gold metallization ensures excellent reliability · SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 147 °C; note 1 IC = 5 mA; VCE = 6 V; Tj = 25 °C IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. - - - - 60 - TYP. - - - - 120 9 17 1.2 1 2 3 PINNING PIN base emitter collector
1 Top view
BFS505
DESCRIPTION Code: N0
handbook, 2 columns
3
2
MBC870
Fig.1 SOT323.
MAX. 20 15 18 150 250 - - 1.7
UNIT V V mA mW GHz dB dB
Ic = 5 mA; VCE = 6 V; f = 900 MHz; - Tamb = 25 °C Ic = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C -
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 147 °C; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN.
BFS505
MAX. 20 15 2.5 18 150 150 175
UNIT V V V mA mW °C °C
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 147 °C; note 1 THERMAL RESISTANCE 190 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS Tj = 25 °C, unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 6 V IC = 5 mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 0.5 V; f = 1 MHz IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C MIN. - 60 - - - - - - 13 - - - - - TYP. - 120 0.4 0.4 0.3 9 17 10 14 1.2 1.6 1.9 4 10
BFS505
MAX. 50 250 - - - - - - - 1.7 2.1 - - -
UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm
maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; (note 1) Tamb = 25 °C IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C
S212 F
insertion power gain noise figure
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C s = opt; IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C s = opt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C
PL1 ITO Notes
output power at 1 dB gain compression third order intercept point
Ic = 5 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 °C note 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G U M = 10 log ------------------------------------------------------------ dB. 2 2 1 S 11 1 S 22 2. IC = 5 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and at f(2p-q) = 904 MHz.
2
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS505
MRC020 - 1
MRC019
handboo2,00 k halfpage
handbook, halfpage
200
Ptot (mW) 150
h FE 150
100
100
50
50
0 0 50 100 150 Ts ( o C) 200
0 10-3
10-2
10-1
1
10 102 I C (mA)
VCE = 6 V; Tj = 25 °C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector current.
MRC011
handbook,0.5 halfpage
C re (pF)
handbook, halfpage f
12
MRC013
0.4
T (GHz) 10
VCE = 8 V 3V
8 0.3 6 0.2 4 0.1
2
0
0
2
4
6
8
10 VCB (V)
0 10-1
1
10
I C (mA)
102
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.4
Feedback capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
September 1995
5
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