|
|
Part: BLA0912-250
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> LMOS (Lateral MOS)
Description: Avionics Ldmos Transistor<<<>>>silicon N-channel Enhancement Mode Lateral D-mos Transistor Encapsulated in a 2-lead SOT502A Flange Package With a Ceramic Cap. The Common Source is Connected to The Mounting Flange. <<<>>><<<>>> <<<>>> Features High Power Gain <<<>>>Easy Power Control <<<>>>Excellent Ruggedness <<<>>>Source on Mounting Base Eliminates DC ISOlators, Reducing Common Mode Inductance. <<<>>><<<>>> <<<>>> Applications Avionics Transmitter Applications in The 960 to 1215 MHZ Frequency Range Such as Mode-S, Tcas And Jtids, Dme / Tacam.
Company: Philips Semiconductors
Datasheet: Download BLA0912-250 datasheet File size : 83 kB
Request For quote: Find where to buy BLA0912-250
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLA0912-250 Avionics LDMOS transistor
Preliminary specification 2003 Oct 24
Philips Semiconductors
Preliminary specification
Avionics LDMOS transistor
FEATURES · High power gain · Easy power control · Excellent ruggedness · Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS
handbook, halfpage
BLA0912-250
PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
· Avionics transmitter applications in the 960 to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME / TACAM. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.
1
2 Top view
3
MBK394
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA Typical RF performance measured in common source class-AB circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Ths = 25 °; ZTH = 0.15 K/W; unless specified otherwise. MODE OF OPERATION tp = 32 µs; = 0.1 %; TCAS: 1030 to 1090 MHz t p = 1 0 0 µs ; = 1 0 % t p = 1 2 8 µs ; = 2 % ; Mode-S: 1030 to 1090 MHz t p = 3 4 0 µs ; = 1 % ; Mode-S: 1030 to 1090 MHz tp = 3.3 ms; = 22 %; JTIDS: 960 to 1215 MHz VDS (V ) 36 36 36 36 36 PL (W) 250 250 250 250 200 Gp (dB) 14.0 13.5 13.5 13.5 13.0 Gp (dB ) 0.8 0.8 0.8 0.8 1.2 D (% ) 50 50 50 50 45 pD (dB ) 0 0.1 0.1 0.2 0.2 tr (ns ) 25 25 25 25 25 tf (ns ) 6 6 6 6 6 zth j-h (K/W ) 0.07 0.18 0.15 0.20 0.45 R (°) ±5 ±5 ±5 ±5 ±5
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS V GS Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature Ths 25 °C; tp = 50 µs; = 2 % CONDITIONS - - - -65 - MI N . MA X . 75 ±2 2 700 +150 200 V V W °C °C UNIT
2003 Oct 24
2
Philips Semiconductors
Preliminary specification
Avionics LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Zth j-h N o te 1. Thermal resistance is determined under RF operating conditions; tp = 100 µs, = 10 %. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 3 mA VDS = 10 V; ID = 300 mA VGS = 0; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±20 V; VDS = 0 VDS = 10 V; ID = 10 A VGS = 9 V; ID = 10 A MI N . 75 4 - 45 - - - PARAMETER thermal impedance from junction to heatsink CONDITIONS Ths = 25 °C; note 1
BLA0912-250
VALUE 0.18
UNIT K/W
TYP. - - - - - 9 60
MAX. - 5 1 - 1 - -
UNIT V V µA A µA S m
2003 Oct 24
3
Philips Semiconductors
Preliminary specification
Avionics LDMOS transistor
BLA0912-250
APPLICATION INFORMATION RF performance in common source class-AB circuit. Ths = 25°C; ZTH = 0.15 K/W; unless specified otherwise. PARAMETER Supply voltage Frequency Output power Gain Drain efficiency Thermal impedance Rise time Fall time Pulse droop Spurious Operating Temp. SYMBOL VDS fR PL GP D ZTH tR tF PD T hs - 960 250 12 40 - - - - - - 55 MI N . - - - 13 50 - 25 6 0.1 - TYP. MAX. 36 1215 - - - 0.2 50 25 0 .5 -6 0 +7 0 V MH z W dB % K/W ns ns dB d Bc °C UNIT - - tp = 100 µs - = 10% @ POUT = 250 W tp = 100 µs - = 10% tp = 100 µs - = 10% - - tp = 100 µs - = 10% VSWRL 2 : 1 - NOTES
Ruggedness in class-AB operation The BLA0912-250 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 36 V; f = 960 to 1215 MHz at rated load power. Typical impedance values FREQUENCY (MHz) 960 1 030 1 090 1140 1 215 ZS ( ) 0.89 -j1.70 1.37 -j1.23 2.09 -j1.27 2.40 -j1.97 1.51 -j2.61 ZL ( ) 1.53 -j1.13 1.47-j0.99 1.38 -j0.85 1.30 -j0.71 1.17 -j0.47
2003 Oct 24
4
Philips Semiconductors
Preliminary specification
Avionics LDMOS transistor
BLA0912-250
18
15 Gp (dB) 13 11 9 7 5 940
D GP
55 45 35 25
D (%)
GP 16 (dB) 14 12 10 8 6 4
(5) (2)
(1)
(4)
(3)
15 5 1040 1090 1140 1190 1240 f (MHz)
2 0 0 50 100 150 200 250 300 PL (W)
990
Ths = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; = 10%. (1) f = 960 MHz. (2) f = 1 030 MHz. (3) f = 1 090 MHz. (4) f = 1 140 MHz. (5) f = 1215 MHz.
Ths = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; = 10%.
Fig.2
Power gain and efficiency as functions of load power; typical values.
Fig.3
Power gain as a function of load power; typical values.
300 PL (W) 250 (5) 200 (3) (4) (2)
60 D (%) 50 (1) 40 (3) (4) (5) (1) (2)
150
30
100 50
20 10
0 0 2 4 6 8 10 12 14 16 Pi (W)
0 0 50 100 150 200 250 300 PL (W)
Ths = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; = 10%. (1) f = 960 MHz. (2) f = 1 030 MHz. (3) f = 1 090 MHz. (4) f = 1 140 MHz. (5) f = 1215 MHz.
Ths = 25 °C; VDS = 36 V; IDQ = 150 mA; class-AB; tp = 100 µs; = 10%. (1) f = 960 MHz. (2) f = 1 030 MHz. (3) f = 1 090 MHz. (4) f = 1 140 MHz. (5) f = 1215 MHz.
Fig.4
Load power as a function of Pi; typical values.
Fig.5
Efficiency as a function of load power; typical values.
2003 Oct 24
5
Others parts begin by bl
BL-1 BL-2 BL-3 BL-4 BL-5 BL-6
|
|
|
