|
|
Part: BLA1011-10
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: BLA1011-10; Avionics Ldmos Transistor
Company: Philips Semiconductors
Datasheet: Download BLA1011-10 datasheet File size : 83 kB
Request For quote: Find where to buy BLA1011-10
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLA1011-10 Avionics LDMOS transistor
Product specification Supersedes data of 2002 Jun 17 2002 Oct 02
Philips Semiconductors
Product specification
Avionics LDMOS transistor
FEATURES · High power gain · Easy power control · Excellent ruggedness · Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS · Avionics transmitter applications in the 1 030 to 1 090 MHz frequency range. DESCRIPTION
2 1
BLA1011-10
PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
3
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.
Top view
MBK584
Fig.1 Simplified outline (SOT467C).
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 50 µs; = 2 % f (MHz) 1 030 to 1 090 VDS (V) 36 PL (W) 10 Gp (dB) >15 D (%) >40
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Th 25 °C CONDITIONS - - - - -65 - MIN. MAX. 75 ±15 2.2 25 +150 200 V V A W °C °C UNIT
2002 Oct 02
2
Philips Semiconductors
Product specification
Avionics LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Zth j-mb Rth mb-h Notes 1. Thermal impedance is determined under RF operating conditions with pulsed bias. 2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 0.7 mA VDS = 10 V; ID = 20 mA VGS = 0; VDS = 28 V VGS = ±15 V; VDS = 0 VDS = 10 V; ID = 0.75 A VGS = 10 V; ID = 0.75 A 4 - - - - MIN. 75 - - - - - 0.5 1.2 PARAMETER thermal impedance from junction to mounting base thermal resistance from mounting base to heatsink note 2 CONDITIONS Tmb = 25 °C; note 1
BLA1011-10
VALUE 1.2 0.55
UNIT K/W K/W
TYP.
MAX. - 5 0.1 - 40 - -
UNIT V V mA A nA S
VGS = VGSth + 9 V; VDS = 10 V 2.8
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.55 K/W unless otherwise specified. MODE OF OPERATION Pulsed class-AB; tp = 50 µs; = 2% f (MHz) 1 030 to 1 090 VDS (V) 36 IDQ (mA) 50 PL (W) 10 Gp (dB) >15 D (%) >40 tr (ns) <20 tf (ns) <20 PULSE DROOP (dB) <0.5
Ruggedness in class-AB operation The BLA1011-10 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the operating conditions. Typical impedance values FREQUENCY (MHz) 1 030 1 060 1 090 ZS () 1 + j 10.6 1.3 + j 6.99 1.42 + j 7 ZL () 4.3 + j 7 5.99 + j 13.98 7 + j 11.58
2002 Oct 02
3
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
handbook, halfpage
15
MGU494
handbook, halfpage
PL (W)
24 Gp (dB) 20
MGU493
D
Gp
60
D (%) 50
10
16
(1) (2) (3)
40
12
(1) (2) (3)
30
5
8
20
4
10
0 0 50 100 PD (mW) 150
0 0 5 10 PL (W)
0 15
Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB; tp = 50 µs; = 2%. (1) f = 1 090 MHz. (2) f = 1 060 MHz. (3) f = 1 030 MHz.
Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB; tp = 50 µs; = 2%. (1) f = 1 090 MHz. (2) f = 1 060 MHz. (3) f = 1 030 MHz.
Fig.2
Load power as a function of drive power; typical values.
Fig.3
Power gain and efficiency as functions of load power; typical values.
handbook, halfpage G
24 p (dB) 20
MGU495
handbook, halfpage
12
MGU496
PL (W) 8
16
12
8
4
4
0 1000
0 1040 1080 f (MHz) 1120 0 1 2 3 4 VGS (V) 5
Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB; PL = 10 W; tp = 50 µs; = 2%.
Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB; f = 1 090 MHz; tp = 50 µs; = 2%.
Fig.4
Power gain as a function of frequency; typical values.
Fig.5
Load power as a function of gate-source voltage; typical values.
2002 Oct 02
4
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
handbook, full pagewidth
51.75
51.75
C13 C14 C7 C6 C5 C1 C2 C3 C4 R1 C15 3.2 13.5 37.5 C8 C10 3.5 6.0 9.3 C9 C11 60 C12
MGU497
Dimensions in mm. The components are situated on one side of the Rogers 6010 printed-circuit board (thickness = 0.64 mm; r = 6.2), the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.
Fig.6 Printed-circuit board for class-AB test circuit.
List of components for class-AB test circuit (see Fig.6) COMPONENT C1 C2, C11 C3 C4 C5 C6 C7, C13 C8 C9 C10 C12 C14 C15 R1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 200B or capacitor of same quality. 2002 Oct 02 5 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 tekelec trimmer; type 37293 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 electrolytic capacitor multilayer ceramic chip capacitor; note 1 SMD resistor (0805) 2.7 pF 56 pF 0.8 to 8 pF 3.6 pF 6.2 pF 2 pF 62 pF 11 pF 1.5 pF 6.2 pF 20 nF 4.7 µF; 50 V 36 pF 22 VALUE
Others parts begin by bl
BL-1 BL-2 BL-3 BL-4 BL-5 BL-6
|
|
|
