|
|
Part: BLW60C
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW60C; VHF Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW60C datasheet File size : 837 kB
Request For quote: Find where to buy BLW60C
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW60C VHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hFE groups are available on request. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLW60C
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCC V 12,5 f MHz 175 PL W 45 GL dB > 5,0 % > 75 typ. 35 zi 1,2 + j1,4 - ZL 2,6 - j1,2 - d3 dB - typ. -33
12,5 1,6-28
3-30 (P.E.P.) typ. 19,5
PIN CONFIGURATION
PINNING - SOT120A. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage
4
1 2 3
1
3
4
2
MSB056
Fig.1 Simplified outline. SOT120A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. -65 to + max.
BLW60C
36 V 16 V 4V 9A 22 A 100 W 150 °C 200 °C
102 handbook, halfpage
MGP479
handbook, halfpage
150
MGP480
IC (A)
Prf (W) 100
10 Th = 70 °C Tmb = 25 °C 50
derate by 0.52 W/K
0.38 W/K
1 1 10 VCE (V) 102
0 0 50 Th (°C) 100
I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 16,5 V; f > MHz.
THERMAL RESISTANCE (dissipation = 40 W; Tmb = 88 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 2,8 K/W 2,05 K/W 0,45 K/W
March 1993
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 °C Breakdown voltage Collector-emitter voltage VBE = 0; IC = 50 mA Collector-emitter voltage open base; IC = 100 mA Emitter-base voltage open collector; IE = 25 mA Collector cut-off current VBE = 0; VCE = 15 V Transient energy L = 25 mH; f = 50 Hz open base -VBE = 1,5 V; RBE = 33 D.C. current gain
(1)
BLW60C
V(BR)CES V(BR)CEO V(BR)EBO ICES
> > > <
36 V 16 V 4V
25 mA
E E
> >
8 ms 8 ms
IC = 4 A; VCE = 5 V D.C. current gain ratio of matched devices IC = 4 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 12,5 A; IB = 2,5 A Transition frequency at f = 100 MHz IC = 4 A; VCE = 12,5 V IC = 12,5 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Feedback capacitance at f = 1 MHz IC = 200 mA; VCE = 15 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 µs; 0,02.
(1) (1)
hFE
typ 10 to <
50 80
hFE1/hFE2
1,2
VCEsat
typ
1,5 V
fT fT
typ typ
650 MHz 600 MHz
Cc
typ <
120 pF 160 pF
Cre Ccs
typ typ
80 pF 2 pF
March 1993
4
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
MGP481
MGP482
handbook, halfpage
75
typical values Tj = 25 °C VCE = 12.5 V
handbook, halfpage
300
hFE 5V
Cc (pF) 200 typ
IE = Ie = 0 f = 1 MHz
50
25
100
0 0 5 10 IC (A) 15
0 0 10 VCB (V) 20
Fig.4
DC current gain as a function of collector current.
Fig.5
Collector capacitance as a function of collector-base voltage.
handbook, full pagewidth
750
MGP483
fT (MHz)
VCE = 12.5 V 10 V
typical values f = 100 MHz Tj = 25 °C
500 5V
250
0 0 5 10 15 IC (A) 20
Fig.6 Transition frequency as a function of collector current.
March 1993
5
Others parts begin by bl
BL-1 BL-2 BL-3 BL-4 BL-5 BL-6
|
|
|
