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Part: BLW76
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW76; Hf/vhf Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW76 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW76 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched hFE groups. The transistor has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW76
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) Note 1. At 80 W P.E.P. PIN CONFIGURATION PINNING - SOT121B. PIN
handbook, halfpage 4
VCE V 28 28
IC(ZS) A 0,05 -
f MHz 1,6 - 28 108
PL W 8 - 80 (P.E.P.) 80
Gp dB > 13 typ. 7,9 >
% 35(1) typ. 70
d3 dB < -30 -
DESCRIPTION collector emitter base emitter
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW76
70 V 35 V 4V 8A 20 A 140 W 200 °C
-65 to + 150 °C
MGP499
handbook, halfpage
10
handbook, halfpage
200
MGP500
Prf (W) IC (A) Th = 70 °C Tmb = 25 °C 100 150
derate by 0.77 W/K
50 derate by 0.56 W/K
1 1 10 VCE (V)
102
0 0 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch 50 Th (°C) 100
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE 28 V; f > 1 MHz.
THERMAL RESISTANCE (dissipation = 60 W; Tmb = 82 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 1,92 K/W 1,33 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 50 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 35 V D.C. current gain(1) hFE hFE1/hFE2 voltage(1) VCEsat MHz(2) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. typ. V(BR) CEO > V(BR) CES >
BLW76
70 V 35 V 4V 10 mA 15 to 80 1,2 2,5 V 315 MHz 305 MHz 125 pF 85 pF 3 pF
handbook, halfpage
10
MGP501
IC (A) 1 Th = 70 °C 25 °C
10-1
Fig.4 Typical values; VCE = 20 V.
10-2 0.5
1
1.5
VBE (V)
2
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
handbook, halfpage
60
MGP502
handbook, halfpage
600
MGP503
hFE
VCE = 28 V
Cc (pF) 400
40 5V
20
200 typ
0 0 10 IC (A) 20
0 0 20 VCB (V) 40
Fig.5 Typical values; Tj = 25 °C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
handbook, full pagewidth
600
MGP504
fT (MHz)
400 typ
200
0 0 5 10 15 -IE (A) 20
Fig.7 VCB = 28 V; f = 100 MHz; Tj = 25 °C.
August 1986
5
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