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Part: BLW78
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW78; Hf/vhf Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW78 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW78 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB or B operated mobile, industrial and military transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW78
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-A) s.s.b. (class-AB) Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. VCE V 28 26 28 3 0,05 IC IC(ZS) A - f MHz 150 28 28 100 35 (P.E.P.) 100 (P.E.P.) PL W > Gp dB 6 > - typ. 42 typ. 19,5 typ. 19,0 % 70 d3(1) dB - typ. -40 typ. -30
PIN CONFIGURATION
PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage 4
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW78
70 V 35 V 4V 10 A 25 A 160 W 200 °C
-65 to +150 °C
102 handbook, halfpage
MGP543
handbook, halfpage
200
MGP544
IC (A)
Prf (W)
150
derate by 0.79 W/K
10 Th = 70 °C Tmb = 25 °C
100
derate by 0.61 W/K
1 1 10 VCE (V)
102
50 0 50 Th (°C) 100
I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 28 V; f > 1 MHz.
THERMAL RESISTANCE (dissipation = 80 W; Tmb = 86 °C; i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 1,45 K/W 1,06 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 5 mA Collector cut-off current VBE = 0; VCE = 35 V D.C. current gain(1) hFE VCEsat MHz(2) fT fT Cc Cre Ccf 20 to 85 typ. 2V IC = 5 A; VCE = 5 V Collector-emitter saturation voltage IC = 15 A; IB = 3 A Transition frequency at f = 100 -IE = 5 A; VCB = 28 V -IE = 15 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp 300 µs; 0,02. 2. Measured under pulse conditions: tp 50 µs; 0,01. typ. 102 pF typ. 3 pF typ. 155 pF ICES 4V V(BR)CEO > 35 V V(BR)CES > 70 V
BLW78
typ. 370 MHz typ. 350 MHz
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
handbook, halfpage
75
MGP545
handbook, halfpage
600
MGP546
hFE 50
VCE = 28 V
Cc (pF) 400
5V
typ 25 200
0 0 5 IC (A) 10
0 0 20 VCB (V) 40
Fig.4 Typical values; Tj = 25 °C.
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
handbook, full pagewidth
750
MGP547
fT (MHz)
500
VCB = 28 V 20 V 250
0 0 5 10 15 20 -IE (A) 25
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
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