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Part: BLW81
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW81; UHF Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW81 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW81 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1/4" capstan envelope with a ceramic cap.
BLW81
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL W 10 10 > Gp dB 6,0 > typ. 13,5 % 60 typ. 60 zi 1,3 + j2,5 1,2 - j0,6 YL mS 150 - j66 140 - j80
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c. or average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC ICM Ptot Tstg Tj max max max max max max max 36 V 17 V 4V 2,5 A 7,5 A
BLW81
40 W 200 °C
-65 to +150 °C
MGP573
handbook, halfpage
10
MGP574
handbook, halfpage
50
IC (A)
Prf (W)
r.f. power dissipation VCE 16.5 V f > 1 MHz
40
short time operation during mismatch derate by 0.204 W/K continuous operation
30
Tmb = 25 °C
20
Th = 70 °C
10
1 1 10 VCE (V) 102
0 0 50 Th (°C) 100
Fig.2
Fig.3
THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink Rth j-mb Rth mb-h = = 4,3 K/W 0,6 K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 °C Breakdown voltages Collector-emitter voltage VBE = 0; IC = 25 mA Collector-emitter voltage open base; IC = 100 mA Emitter-base voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 17 V D.C. current gain (1) IC = 1,25 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 3,75 A; IB = 0,75 A Transition frequency at f = 500 MHz (1) IC = 1,25 A; VCE = 12,5 V IC = 3,75 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 12,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 µs; 0,02. Cre Ccs typ typ Cc typ fT fT typ typ VCEsat typ hFE > typ ICES V(BR)CEO > V(BR)CES >
BLW81
36 V 17 V 4V
10 mA
10 35
0,75 V
1,3 GHz 0,9 GHz
34 pF
18 pF 1,2 pF
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLW81
MGP575
handbook, halfpage
40
VCE = 5 V typ Tj = 25 °C
handbook, halfpage
60
MGP576
IE = Ie = 0 f = 1 MHz Tj = 25 °C
hFE 30
Cc (pF) 40
typ
20
20 10
0 0 2.5 5 IC (A) 7.5
0 0 10 VCB (V) 20
Fig.4
Fig.5
handbook, full pagewidth
2
MGP577
VCE = 12.5 V f = 500 MHz Tj = 25 °C
fT (GHz) 1.5
typ 1
0.5
0 0 2.5 5 IC (A) 7.5
Fig.6
March 1993
5
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