|
|
Part: BLW83
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW83; Hf/vhf Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW83 datasheet File size : 837 kB
Request For quote: Find where to buy BLW83
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW83 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW83
QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) PIN CONFIGURATION
halfpage
VCE V 26 28
f MHz 1,6 - 28 1,6 - 28
PL W 0 - 10 (P.E.P.) 3 - 30 (P.E.P.) >
Gp dB 20 typ. 21
dt % -
IC A 1,35 <
d3 dB -40 typ. -30
Th °C 70 25
typ. 40 typ. 1,34
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open-collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW83
65 V 36 V 4V 3A 9A 76 W 200 °C
-65 to + 150 °C
MGP586
MGP587
handbook, halfpage
10
handbook, halfpage
100
IC (A) Th = 70 °C 1 Tmb = 25 °C
Prf (W)
short-time operation during mismatch continuous r.f. operation derate by 0.42 W/K continuous d.c. operation derate by 0.32 W/K
50
10-1 1 10 VCE (V)
102
0 0 50 100 Th (°C) 150
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 28 V; f 1 MHz.
THERMAL RESISTANCE (dissipation = 35 W; Tmb = 80 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 3,15 K/W 2,35 K/W 0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 10 mA Collector-emitter breakdown voltage open base; IC = 50 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 36 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain (1) IC = 1,25 A; VCE = 5 V D.C. current gain ratio of matched IC = 1,25 A; VCE = 5 V Collector-emitter saturation IC = 3,75 A; IB = 0,75 A Transition frequency at f = 100 MHz(1) -IE = 1,25 A; VCB = 28 V -IE = 3,75 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 µs; 0,02.
MGP588
BLW83
V(BR)CES V(BR)CEO V(BR)EBO ICES ESBO ESBR hFE devices(1) hFE1/hFE2 voltage(1) VCEsat fT fT Cc Cre Ccf
> > > > typ.
65 V 36 V 4V 4 mA 8 mJ 8 mJ 50 10 to 100
< typ. typ. typ. typ. typ. typ.
1,2 1,5 V 530 MHz 530 MHz 50 pF 31 pF 2 pF
handbook, halfpage
3
IC (A) Th = 70 °C 2 25 °C
1
Fig.4 Typical values; VCE = 28 V. August 1986
0 0 1 VBE (V) 2
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
handbook, halfpage
75
MGP589
MGP590
handbook, halfpage
150
hFE
VCE = 28 V
Cc (pF) 100
50
5V
typ 25 50
0 0 5 IC (A) 10
0 0 20 VCB (V) 40
Fig.5 Typical values; Tj = 25 °C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
handbook, full pagewidth
600
MGP591
fT (MHz)
VCB = 28 V
400 15 V
200
0 0 2 4 6 8 -IE (A) 10
Fig.7 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
Others parts begin by bl
BL-1 BL-2 BL-3 BL-4 BL-5 BL-6
|
|
|
