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Part: BLW85
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW85; Hf/vhf Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW85 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW85 HF/VHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW85
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCE V 12,5 12,5 f MHz 175 1,6-28 PL W 45 3-30 (P.E.P.) > Gp dB 4,5 > typ. 19,5 % 75 typ. 35 zi 1,4 + j1,5 - ZL 2,7-j1,3 - d3 dB - typ. -33
PIN CONFIGURATION
halfpage
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open-collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation up to (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW85
36 V 16 V 4V 9A 22 A 105 W 200 °C
-65 to + 150 °C
handbook, halfpage
10
MGP612
MGP613
handbook, halfpage P
IC (A)
120 rf (W) 100
Th = 70 °C
Tmb = 25 °C 80
short-time operation during mismatch continuous r.f. operation derate by 0.58 W/K
60 continuous d.c. operation derate by 0.43 W/K
40
20
1
1
10
VCE (V)
102
0 0 50 100 Th (°C) 150
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 16,5 V; f 1 MHz.
THERMAL RESISTANCE (dissipation = 30 W; Tmb = 79 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 2,5 K/W 1,8 K/W 0,3 K/W
March 1993
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 25 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE hFE1/hFE2 voltage(1) VCEsat MHz(1) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. typ. > typ. ICES V(BR) CEO > V(BR) CES >
BLW85
36 V 16 V 4V 25 mA 8 mJ 8 mJ 50 10 to 80 1,2 1,5 V 650 MHz 600 MHz 120 pF 82 pF 2 pF
March 1993
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP614
handbook, halfpage
100
MGP615
typical values Tj = 25 °C
handbook, halfpage
300
hFE 75 VCE = 12.5 V 5V 50
Cc (pF) 200 typ
IE = Ie = 0 f = 1 MHz
100 25
0 0 5 10 IC (A) 15
0 0 10 VCB (V) 20
Fig.4
Fig.5 Tj = 25 °C.
handbook, full pagewidth
750
MGP616
fT (MHz)
VCB = 12.5 V 10 V
typical values f = 100 MHz Tj = 25 °C
500 5V
250
0 0 5 10 15 -IE (A) 20
Fig.6
March 1993
5
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