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Part: BLW86
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW86; Hf/vhf Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW86 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW86 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW86
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) s.s.b. (class-A) VCE V 28 28 26 f MHz 175 1,6 - 28 1,6 - 28 PL W 45 5-47,5 (P.E.P.) 17 (P.E.P.) > Gp dB 7,5 > - typ. 19 typ. 22 % 70 typ. 45 zi - - YL mS - - d3 dB - typ. -30 typ. -42
0,7 + j1,3 110 - j62
PIN CONFIGURATION
halfpage
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open-collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW86
65 V 36 V 4V 4A 12 A 105 W 200 °C
-65 to + 150 °C
handbook, halfpage
10
MGP630
handbook, halfpage
150
MGP631
IC (A)
Prf (W) 100
derate by 0.58 W/K 0.43 W/K
Th = 70 °C
Tmb = 25 °C
50
1 10
VCE (V)
102
0 0 50 Th (°C) 100
I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 28 V; f > 1 MHz.
THERMAL RESISTANCE (dissipation = 45 W; Tmb = 83,5 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 2,65 K/W 1,95 K/W 0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 25 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 36 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE typ. 45 10 to 80 < typ. typ. typ. typ. typ. typ. 1,2 IC = 2,5 A; VCE = 5 V D.C. current gain ratio of matched devices(1) IC = 2,5 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 7,5 A; IB = 1,5 A Transition frequency at f = 100 -IE = 2,5 A; VCB = 28 V -IE = 7,5 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 µs; 0,02.
handbook, halfpage
BLW86
V(BR)CES V(BR)CEO V(BR)EBO ICES ESBO ESBR
> > > >
65 V 36 V 4V 10 mA 8 mJ 8 mJ
hFE1/hFE2 VCEsat MHz(1) fT fT Cc Cre Ccf
1,5 V 570 MHz 570 MHz 82 pF 54 pF 2 pF
4
MGP632
IC (A)
2
Th = 70 °C
25 °C
Fig.4
Typical values; VCE = 28 V.
0 0.5
1
VBE (V)
1.5
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
MGP633
handbook, halfpage
100
handbook, halfpage
300
MGP634
Cc (pF) hFE VCE = 28 V 200
50 5V
100
typ
0 0 5 10 IC (A) 15
0 0 20 VCB (V) 40
Fig.5 Typical values; Tj = 25 °C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
handbook, full pagewidth
1000
MGP635
fT (MHz)
VCB = 28 V 500 15 V
0 0 5 10 -IE (A) 15
Fig.7 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
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