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Part: BLW87
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW87; VHF Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW87 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW87 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW87
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. VCE V 13,5 f MHz 175 PL W 25 Gp dB >6 % > 70 zi 1,6 + j1,4 YL mS 210 + j5,5
PIN CONFIGURATION
halfpage
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW87
36 V 18 V 4V 6A 12 A 76 W 200 °C
-65 to + 150 °C
handbook, halfpage
10
MGP649
MGP650
handbook, halfpage
100
IC (A)
Prf (W)
Th = 70 °C
Tmb = 25 °C
continuous r.f. operation derate by 0.42 W/K
short-time operation during mismatch
50 continuous d.c. operation derate by 0.32 W/K
1
1
10
VCE (V)
102
0 0 50 100 Th (°C) 150
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE 16,5 V; f 1 MHz.
THERMAL RESISTANCE (dissipation = 20 W; Tmb = 76 °C; i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 3,0 K/W 2,25 K/W 0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC = 25 mA Collector-emitter breakdown voltage open base; IC = 50 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE VCEsat MHz(1) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. typ. IC = 2,5 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 7,5 A; IB = 1,5 A Transition frequency at f = 100 -IE = 2,5 A; VCB = 13,5 V -IE = 7,5 A; VCB = 13,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 15 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 µs; 0,02. ESBO ESBR > > typ. ICES V(BR) CEO > V(BR) CES >
BLW87
36 V 18 V 4V 10 mA 8 mJ 8 mJ 50 10 to 80 1,7 V 800 MHz 750 MHz 65 pF 41 pF 2 pF
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLW87
MGP651
handbook, halfpage
75
MGP652
typical values Tj = 25 °C VCE = 13.5 V 5V
handbook, halfpage
200
IE = Ie = 0 f = 1 MHz
hFE
Cc (pF)
50
100 typ 25
0 0 5 10 IC (A) 15
0 0 10 VCB (V) 20
Fig.4
Fig.5 Tj = 25 °C.
handbook, full pagewidth
1000
MGP653
VCB = 13.5 V typ f = 100 MHz Tj = 25 °C
fT (MHz)
500
0 0 5 10 -IE (A) 15
Fig.6
August 1986
5
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