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Part: BLW898
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW898; UHF Linear Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW898 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW898 UHF linear power transistor
Product specification Supersedes data of 1995 Oct 04 1996 Jul 16
Philips Semiconductors
Product specification
UHF linear power transistor
FEATURES · Internal input matching for wideband operation and high power gain · Polysilicon emitter ballasting resistors for an optimum temperature profile · Gold metallization ensures excellent reliability. APPLICATION · Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap. The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of 25 V. PINNING SOT171A PIN 1 2 3 4 5 6 emitter emitter base collector emitter emitter
BLW898
DESCRIPTION
handbook, halfpage
246
c b
135 Top view
MAM141
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW class-A Note 1. Three-tone test signal (-8, -16, and -10 dB); dim = -63 dB. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. f (MHz) 860 VCE (V) 25 ICQ (A) 1.1 Po sync (W) 3(1) Gp (dB) 9(1)
1996 Jul 16
2
Philips Semiconductors
Product specification
UHF linear power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature up to Tmb = 70 °C CONDITIONS open emitter open base open collector - - - - - - -65 - MIN.
BLW898
MAX. 60 28 2.5 3.7 3.7 44 +150 200 V V V A A W
UNIT
°C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS Ptot = 44 W; Tmb = 70 °C VALUE 3 0.3 UNIT K/W K/W
handbook, halfpage
120
MGD531
Ptot (W)
80
(2)
(1)
40
0 0 40 80 120 Tmb °C 160
(1) Continuous operation (2) Short-time operation during mismatch.
Fig.2
Power derating curve.
1996 Jul 16
3
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current collector-emitter leakage current DC current gain collector capacitance feedback capacitance CONDITIONS IC = 15 mA; IE = 0 IC = 30 mA; IB = 0 IE = 0.6 mA; IC = 0 VBE = 0; VCB = 28 V VCE = 20 V VCE = 25 V; IC = 1.1 A VCB = 25 V; IE = ie = 0; f = 1 MHz MIN. 60 28 2.5 - - 30 - TYP. - - - - - - 18 11
BLW898
MAX. - - - 1.5 3 140 - -
UNIT V V V mA mA pF pF
VCB = 25 V; IC = 0; f = 1 MHz -
MGD532
handbook, halfpage
160
handbook, halfpage
60
MGD533
hFE 120
Cc (pF)
40
80
20 40
0 0 1 2 IC (A) 3
0 0 10 20 30 VCB (V) 40
VCE = 25 V; tp = 500 µs; = <1 %.
IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage; typical values.
1996 Jul 16
4
Philips Semiconductors
Product specification
UHF linear power transistor
APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter class-A test circuit. MODE OF OPERATION CW class-A CW class-A Notes f (MHz) 860 860 VCE (V) 25 25 ICQ (A) 1.1 1.1 Po sync (W) 3(1) 3(2) Gp (dB) 9(1) 9(2)
BLW898
dim (dB) <-63(1) <-60(2)
1. Three-tone test method (vision carrier -8 dB, sound carrier -10 dB, sideband signal -16 dB), 0 dB corresponds to peak sync level. 2. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLW898 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases, under the conditions: VCE = 25 V; ICQ = 1.1 A; Th = 25 °C; f = 860 MHz; Po sync = 3 W.
MGD534
handbook, halfpage
30
handbook, halfpage
12
MGD535
Po sync (W)
(1)
Gp (dB)
(2)
(1) (2)
20
8
10
4
0 0 1 2 3 4 Pi sync (W)
0 0 10 20 Po sync (W) VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 °C. (2) Th = 70 °C. 30
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 °C. (2) Th = 70 °C.
Fig.5
Output power as a function of input power; typical values.
Fig.6
Power gain as a function of output power; typical values.
1996 Jul 16
5
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