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Part: BLW90
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW90; UHF Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW90 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW90 UHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a 1/4" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLW90
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. VCE V 28 f MHz 470 PL W 4 Gp dB > 11 % > 55
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation (d.c. and r.f.) up to Tmb = 25 °C Storage temperature Operating junction temperature IC; IC(AV) ICM Ptot Tstg Tj max. max. max. max. VCESM VCEO VEBO max. max. max.
BLW90
60 V 30 V 4V 0,62 A 2,0 A 18,6 W 200 °C
-65 to + 150 °C
MGP660
handbook, halfpage
1
handbook, halfpage
30
MGP661
IC (A) Th = 70 °C
Tmb = 25 °C
Ptot (W) 20
10
10-1 1 10 VCE (V) 102
0 0 50 Th (°C) 100
I Continuous d.c. and r.f. operation II Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 Power derating curves vs. temperature.
THERMAL RESISTANCE (dissipation = 6 W; Tmb = 73,6 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. and r.f. dissipation) From mounting base to heatsink Rth j-mb Rth mb-h = = 9,0 K/W 0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC = 4 mA Collector-emitter breakdown voltage open base; IC = 20 mA Emitter-base breakdown voltage open collector; IE = 2 mA Collector cut-off current VBE = 0; VCE = 30 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain
(1)
BLW90
V(BR)CES V(BR)CEO V(BR)EBO ICES ESBO ESBR hFE
> > > > typ.
60 V 30 V 4V 2 mA 1 mJ 1 mJ 40 10 to 100
IC = 0,3 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 1,0 A; IB = 0,2 A Transition frequency at f = 500 MHz -IE = 0,3 A; VCB = 28 V -IE = 1,0 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 20 mA; VCE = 28 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 µs; 0,02.
(1)
VCEsat fT fT Cc Cre Ccs
typ. typ. typ. typ. typ. typ.
0,9 V 1,2 GHz 0,9 GHz 8,4 pF 3,6 pF 1,2 pF
August 1986
4
Philips Semiconductors
Product specification
UHF power transistor
BLW90
MGP662
MGP663
handbook, halfpage
100
handbook, halfpage
40
hFE 75
Cc (pF) 30
50
VCE = 25 V 5V
20
typ 25 10
0 0 0.5 1 IC (A) 1.5
0 0 10 20 VCB (V) 30
Fig.4 Typical values; Tj = 25 °C.
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP664
handbook, halfpage
2
fT (GHz) 1.5
typ 1
0.5
0 0 0.5 1 -IE (A) 1.5
Fig.6 VCB = 28 V; f = 500 MHz; Tj = 25 °C.
August 1986
5
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