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Part: BLW96
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW96; Hf/vhf Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW96 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW96 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups. The transistor has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW96
QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b. (class-AB) c.w. (class-B) s.s.b. (class-A) Note 1. dt at 200 W P.E.P. VCE V 50 50 40 f MHz 1,6 - 28 108 28 PL W 25 - 200 (P.E.P.) > 200 typ. 50 (P.E.P.) typ. Gp dB 13,5 > 19 % 40(1) < - typ. -40 < - 6,5 typ. 67 d3 dB -30 < - -40 d5 dB -30 IC(ZS) (IC) A 0,1 (6) (4)
PIN CONFIGURATION
PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage 4
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 45 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW96
110 V 55 V 4V 12 A 40 A 340 W 200 °C
-65 to + 150 °C
102 handbook, halfpage
MGP685
MGP686
handbook, halfpage
400
Ptot IC (A) (W) 300 derate by 1.58 W/K
10 Th = 70 °C Tmb = 45 °C 200
100
1.35 W/K
1 10
0 VCE (V) 102 0 50 100 Th (°C) 150
I Continuous d.c. operation II Continuous r.f. operation; f > 1 MHz III Short-time operation during mismatch; f > 1 MHz
Fig.2 D.C. SOAR.
Fig.3 Power/temperature derating curves.
THERMAL RESISTANCE (dissipation = 150 W; Tmb = 100 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 0,63 K/W 0,45 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 55 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE typ. 15 to IC = 7 A; VCE = 5 V D.C. current gain ratio of matched devices(1) IC = 7 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 20 A; IB = 4 A Transition frequency at f = 100 -IE = 7 A; VCB = 45 V -IE = 20 A; VCB = 45 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 50 V Feedback capacitance at f = 1 MHz IC = 150 mA; VCE = 50 V Collecting-flange capacitance Notes 1. Measured under pulse conditions: tp 300 µs; 0,02. 2. Measured under pulse conditions: tp 50 µs; 0,01. Cc Cre Ccf typ. typ. typ. MHz(2) fT fT typ. typ. VCEsat typ. hFE1/hFE2 ESBO ESBR > > ICES V(BR)CEO > V(BR)CES >
BLW96
110 V 55 V 4V 10 mA 20 mJ 20 mJ 30 50
1,2 1,9 V 235 MHz 245 MHz
280 pF 170 pF 4,4 pF
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW96
MGP687
MGP688
handbook, halfpage
10
handbook, halfpage
50
-IE (A) 1 Th = 70 °C 25 °C
hFE 40 VCE = 45 V 15 V 30 5V
20 10-1 10
10-2 500
0 750 1000 VBE (mV) 1250 0 10 20 IC (A) 30
Fig.4 Typical values; VCE = 40 V.
Fig.5 Typical values; Tj = 25 °C.
MGP689
MGP690
handbook, halfpage
300
handbook, halfpage
1000
fT (MHz) 200
VCB = 45 V 15 V 5V
Cc (pF) 750
500
100 250
typ
0 0 10 20 -IE (A) 30
0 0 25 50 VCB (V) 75
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
August 1986
5
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