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Part: BLW98
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Power
Description: BLW98; UHF Linear Power Transistor
Company: Philips Semiconductors
Datasheet: Download BLW98 datasheet File size : 837 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW98 UHF linear power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems. FEATURES: · diffused emitter ballasting resistors for an optimum temperature profile; · gold sandwich metallization ensures excellent reliability. The transistor has a 1/4" capstan envelope with ceramic cap. All leads are isolated from the stud.
BLW98
QUICK REFERENCE DATA R.F. performance in linear amplifier MODE OF OPERATION class-A class-A Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. fvision MHz 860 860 VCE V 25 25 IC mA 850 850 Th °C 70 25 dim(1) dB -60 -60 Po sync (1) W > typ. 3,5 4,4 > typ. Gp dB 6,5 7,0
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. (peak value); f > 1 MHz Total power dissipation at Th = 70 °C Storage temperature Operating junction temperature IC ICM Ptot Tstg Tj max. max. max. max. 2A 4A 21,5 W 200 °C VCESM VCEO VEBO max. max. max. 50 V 27 V 3,5 V
BLW98
-65 to +150 °C
handbook, halfpage
10
MGP717
handbook, halfpage
40
MGP718
IC (A)
(1)
Ptot (W) 30 Th = 70 °C Tmb = 25 °C
1
20
10-1
1
10
VCE (V)
102
10 0 50 Th (°C) 100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE (dissipation = 21,25 W; Tmb = 82,75 °C, Th = 70 °C) From junction to mounting base From mounting base to heatsink Rth j-mb Rth mb-h = = 5,45 K/W 0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
handbook, full pagewidth
6.5
MGP719
Rth j-h (K/W) 6 Th = 120 °C 100 °C 80 °C 60 °C 40 °C 20 °C Tj = 200 °C 0 °C 175 °C 5.5 150 °C 125 °C 100 °C 4.5 75 °C
5
4 5 15 25 35 Ptot (W) 45
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example Nominal class-A operation (without r.f. signal): VCE = 25 V; IC = 850 mA; Th = 70 °C. Fig.4 shows: Rth j-h Tj Typical device: Rth j-h Tj max. 6,05 K/W max. typ. typ. 200 °C 5,35 K/W 183 °C
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 10 mA open base, IC = 25 mA Emitter-base breakdown voltage open collector, IE = 5 mA D.C. current gain(1) hFE IC = 850 mA; VCE = 25 V Collector-emitter saturation voltage(1) IC = 500 mA; IB = 100 mA Transition frequency at f = 500 MHz(2) -IE = 850 mA; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 25 V Collector-stud capacitance Notes 1. Measured under pulse conditions: tp 300 µs; 0,02. 2. Measured under pulse conditions: tp 50 µs; 0,01. Cre Ccs typ. typ. Cc typ. > typ. V(BR)CES V(BR)CEO > >
BLW98
50 V 27 V 3,5 V 15 40
0,25 V 2,5 GHz 24 pF 30 pF
15 pF 1,2 pF
handbook, halfpage
10
MGP720
IC (A) 1
Th = 70 °C
25 °C
10-1
10-2 0.5
1
1.5
VBE (V)
2
Fig.5 Typical values; VCE = 25 V.
August 1986
5
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