Details, datasheet, quote on part number: BSN274
PartBSN274
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => DMOS/Vertical Enhancement N-Channel
TitleDMOS/Vertical Enhancement N-Channel
DescriptionBSN274; BSN274A; N-channel Enhancement Mode Vertical D-mos Transistor
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BSN274 datasheet
Cross ref.Similar parts: BSN304/126
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Features, Applications

BSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
N-channel enhancement mode vertical D-MOS transistor

FEATURES Direct interface to C-MOS, TTL, etc., due to low threshold voltage High speed switching No secondary breakdown DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers. QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current (DC) drain-source on-resistance threshold voltage

LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range operating junction temperature open drain DC peak up to Tamb 25 C (note 1) CONDITIONS

THERMAL RESISTANCE SYMBOL Rth j-a Notes 1. Transistor mounted on printed circuit board, maximum lead length 4 mm, mounting pad for drain leads minimum 10 mm. CHARACTERISTICS 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) RDS(on) Yfs Ciss PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate threshold voltage drain-source on-resistance drain-source on-resistance transfer admittance input capacitance CONDITIONS VGS 10 A VDS 220 V VGS = 0 VGS 20 V VDS 1 mA VDS = VGS 250 mA VGS 20 mA VGS 250 mA VDS 25 V VDS 25 V VGS MHz VDS 25 V VGS MHz MIN. TYP. MAX. UNIT mS pF PARAMETER from junction to ambient (note 1) VALUE 125 UNIT K/W


 

Related products with the same datasheet
BSN274A
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BSN274A BSN274; BSN274A; N-channel Enhancement Mode Vertical D-mos Transistor
BSN304 BSN304; N-channel Enhancement Mode Vertical D-mos Transistor;; Package: SOT54 (SPT, E-1)
BSP030 BSP030; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT223 (SC-73)
BSP090 P-channel Enhancement Mode Vertical D-mos Transistor
BSP100 BSP100; N-channel Enhancement Mode Trenchmos (tm) Transistor;; Package: SOT223 (SC-73)
BSP106 N-channel Enhancement Mode Vertical D-mos Transistor
BSP107 BSP107; N-channel Enhancement Mode Vertical D-mos Transistor
BSP108 BSP108; N-channel Enhancement Mode Vertical D-mos Transistor
BSP110 BSP110; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT223 (SC-73)
BSP120 BSP120; N-channel Enhancement Mode Vertical D-mos Transistor
BSP121 BSP121; N-channel Enhancement Mode Vertical D-mos Transistor
BSP122 BSP122; N-channel Enhancement Mode Vertical D-mos Transistor;; Package: SOT223 (SC-73)
BSP126 BSP126; N-channel Enhancement Mode Vertical D-mos Transistor;; Package: SOT223 (SC-73)
BSP127 BSP127; N-channel Enhancement Mode Vertical D-mos Transistor
BSP128 BSP128; N-channel Enhancement Mode Vertical D-mos Transistor
BSP130 BSP130; N-channel Enhancement Mode Vertical D-mos Transistor;; Package: SOT223 (SC-73)
BSP145 N-channel Enhancement Mode Vertical D-mos Transistor: 450v, 250ma
BSP152 N-channel Enhancement Mode Vertical D-mos Transistor
BSP16 BSP16; PNP High-voltage Transistor;; Package: SOT223 (SC-73)
BSP19 BSP19; BSP20; NPN High-voltage Transistors;; Package: SOT223 (SC-73)
BSP204 BSP204; BSP204A; P-channel Enhancement Mode Vertical D-mos Transistor
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