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Part: EC103D1
Category:
Description: EC103D1; Sensitive Gate Thyristor
Company: Philips Semiconductors
Datasheet: Download EC103D1 datasheet File size : 216 kB
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EC103D1
Sensitive gate thyristor
Rev. 01 -- 1 November 2001
M3D186
Product data
1. Description
Ver y sensitive gate thyristor intended to be interfaced directly to low power gate trigger circuits, with very low drive current capability. Product availability: EC103D1 in SOT54 (TO-92).
2. Features
s s s s Blocking voltage to 400 V On-state RMS current to 0.8 A Ultra low gate trigger current Low cost package.
3. Applications
s Ear th leakage circuit breakers s Solid state relays s General purpose switching.
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT54 (TO-92), simplified outline and symbol Description anode (a)
1 1 2 3 2 3
MSB033 MBL308
Simplified outline
Symbol
gate (g) cathode (k)
SOT54 (TO-92)
Philips Semiconductors
EC103D1
Sensitive gate thyristor
5. Quick reference data
Table 2: VDRM VRRM IT(RMS) ITSM Quick reference data Conditions 25 °C Tj 125 °C Typ Max 400 400 0.8 8.0 Unit V V A A repetitive peak off-state voltage repetitive peak reverse voltage on-state current (RMS value) non-repetitive peak on-state current Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM VRRM IT(AV) IT(RMS) ITSM repetitive peak off-state voltage repetitive peak reverse voltage average on-state current on-state current (RMS value) non-repetitive peak on-state current half sine wave; Tlead 83 °C all conduction angles half sine wave; Tj = 25 °C prior to surge t = 10 ms t = 8.3 ms I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing t = 10 ms ITM = 2.0 A; IG = 10 mA; dIG/dt = 100 mA/µs rate of rise on-state current peak gate current peak gate voltage peak reverse gate voltage peak gate power average gate power storage temperature operating junction temperature over any 20 ms period -40 8.0 9.0 0.32 50 1.0 5.0 5.0 2.0 0.1 +150 +125 A A A2s A/µs V V W W °C °C Conditions 25 °C Tj 125 °C Min Max 400 400 0.5 0.8 Unit V V A A
9397 750 08574
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
2 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
0.6 Ptot (W) = 120 = 90 0.4 = 60 = 30
003aaa111
003aaa110
10 ITSM (A) 8
= 180
6
4 0.2 2 0
0 0.2 0.4
0 IT(AV) (A)
0.6
1
10
102
n
103
= conduction angle
n = number of cycles at f = 50 Hz
Fig 1. Maximum on-state dissipation as a function of average on-state current; typical values.
Fig 2. Maximum permissible non-repetitive peak on-state current as a function of number of cycles for sinusoidal currents; typical values.
1.0 IT(RMS) (A) 0.8
003aaa116
2.0 IT(RMS) (A) 1.5
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0.6 1.0 0.4
0.2
0.5
0 -50 0 50 100 150 Tlead (C)
0 10-2
10-1
1
tsurge (s)
10
f = 50 Hz; Tlead 83°C.
Fig 3. Maximum permissible on-state current (RMS value) as a function of lead temperature; typical values.
Fig 4. Maximum permissible repetitive on-state current (RMS value) as a function of surge duration for sinusoidal currents; typical values.
9397 750 08574
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
3 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
7. Thermal characteristics
Table 4: Symbol Rth(j-lead) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to lead thermal resistance from junction to ambient mounted on a printed circuit board; lead length = 4 mm Conditions Value 80 150 Unit K/W K/W
7.1 Transient thermal impedance
102 Zth(j-lead) (K/W)
003aaa108
10
PD t 10 2
tp 1 10- 4 10- 3 10- 2 10- 1 1 10 t p (s)
Fig 5. Transient thermal impedance from junction to lead as a function of pulse duration.
9397 750 08574
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
4 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
8. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol IGT IL IH VT VGT Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage IT = 1.0 A IT = 10 mA; gate open circuit VD = 12 V VD = VDRM (max); Tj = 125 °C ID IR dVD/dt tgt tq off-state current reverse current rate of rise of off-state voltage gate controlled turn-on time commutated turn-off time VD = VDRM (max); VR = VRRM (max); Tj = 125 °C; RGK = 1 k VD = 0.67 VDRM(max); Tcase = 125 °C; exponential waveform; RGK = 1 k ITM = 2.0 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A /µs VD = 0.67 VDRM(max); Tj = 125 °C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A /µs; dVD/dt = 2 V/µs; RGK = 1 k 0.2 0.5 0.3 50 50 25 2 100 0.8 100 100 V V µA µA V/µs µs µs Conditions VD = 12 V; IT = 0.1 A; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 k Min Typ 3 2 2 1.2 Max 12 6 5 1.35 Unit µA mA mA V Static characteristics
Dynamic characteristics
9397 750 08574
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
5 of 11
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