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Part: J210
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> N-Channel
-> Single
Description: N-channel Field-effect Transistor
Company: Philips Semiconductors
Datasheet: Download J210 datasheet File size : 251 kB
Request For quote: Find where to buy J210
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
J210; J211; J212 N-channel field-effect transistors
Product specification File under Discrete Semiconductors, SC07 1997 Dec 01
Philips Semiconductors
Product specification
N-channel field-effect transistors
FEATURES · High speed switching · Interchangeability of drain and source connections · High impedance. APPLICATIONS · Analog switches · Choppers, multiplexers and commutators · Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
Marking codes: J210: J210. J211: J211. J212: J212.
handbook, halfpage 2
J210; J211; J212
PINNING - TO-92 (SOT54) PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION
1
3 g
MAM197
d s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J210 J211 J212 IDSS drain current J210 J211 J212 Ptot yfs total power dissipation common-source transfer admittance J210 J211 J212 Tamb 50 °C VGS = 0; VDS = 15 V 4 6 7 12 12 12 mS mS mS VGS = 0; VDS = 15 V 2 7 15 - 15 20 40 400 mA mA mA mW ID = 1 nA; VDS = 15 V -1 -2.5 -4 -3 -4.5 -6 V V V CONDITIONS - MIN. MAX. ±25 UNIT V
1997 Dec 01
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VDGO IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-source voltage drain-gate voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb 50 °C; note 1; see Fig.13 open drain open source CONDITIONS - - - - - -65 -
J210; J211; J212
MIN.
MAX. ±25 -25 -25 10 400 150 150 V V V
UNIT
mA mW °C °C
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. PARAMETER thermal resistance from junction to ambient; note 1 VALUE 250 UNIT K/W
1997 Dec 01
3
Others parts begin by j2
J2-1
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