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Part: JA101P
Category:
Description: JA101; PNP General Purpose Transistor
Company: Philips Semiconductors
Datasheet: Download JA101P datasheet File size : 119 kB
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
JA101 PNP general purpose transistor
Product specification Supersedes data of 1997 Mar 10 File under Discrete Semiconductors, SC10 1998 Aug 04
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES · Low current (max. 100 mA) · Low voltage (max. 45 V). APPLICATIONS · General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC501. PINNING PIN 1 2 3 base collector emitter
JA101
DESCRIPTION
1 handbook, halfpage
2 3
2 1 3
MAM285
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb 25 °C IC = -1 mA; VCE = -5 V IC = -10 mA; VCE = -5 V; f = 100 MHz open emitter open base CONDITIONS - - - - 135 100 MIN. MAX. -50 -45 -200 500 600 - MHz V V mA mW UNIT
1998 Aug 04
2
Philips Semiconductors
Product specification
PNP general purpose transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -50 -45 -5 -100 -200 -100 500 +150 150 +150
JA101
UNIT V V V mA mA mA mW °C °C °C
UNIT K/W
1998 Aug 04
3
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