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KMI18/2 Integrated rotational speed sensor
Preliminar y specification 2000 Sep 05
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
FEATURES · Open collector output · For active target wheel application · Wide air gap · Zero speed capability · Wide temperature range · Insensitive to vibration.
handbook, halfpage
KMI18/2
PINNING PIN 1 2 3 SYMBOL VCC OUT GND DESCRIPTION DC supply voltage open collector output ground
DESCRIPTION The KMI18/2 sensor detects rotational speed of active target wheels with magnetic reference marks. It consists of a magnetoresistive sensor element, an integrated circuit for signal conditioning and a ferrite magnet. The frequency of the digital voltage output signal is proportional to the rotational speed of the target wheel. An open collector output gives high flexibility in the design of the subsequent signal conditioning electronics. CAUTION Do not press two or more products together against their magnetic forces. Do not expose products to strong magnetic fields of more than 30 kA/m.
1 2 3
MBL224
B1 B2 B3 B4
Fig.1 Simplified outline (SOT477A).
QUICK REFERENCE DATA SYMBOL VCC ICC HyLH HyHL Tamb Note 1. Maximum power consumption according to power derating curve, see Fig.3. PARAMETER DC supply voltage DC supply current magnetic threshold for LH edge magnetic threshold for HL edge ambient operating temperature VCC = 5 V; note 1 CONDITIONS Tamb = -40 to +150 °C VCC = 5 V 6 100 -400 -40 MIN. 4.5 5 7 250 -250 - TYP. MAX. 16.5 10 400 -100 +150 UNIT V mA A/m A/m °C
2000 Sep 05
2
Philips Semiconductors
Preliminar y specification
Integrated rotational speed sensor
LIMITING VALUES In accordance with Absolute Maximum Rating System (IEC 60134); Tamb = -40 to +150 °C; see Fig.4. SYMBOL VCC VOUT IOUT(max) IOUT(high) Ptot Tamb Tstg Tsld Notes 1. Low: transistor open (VCE 4 V). PARAMETER DC supply voltage output voltage maximum output current output leakage current total power dissipation ambient operating temperature storage temperature soldering temperature t 10 s CONDITIONS not protected against incorrect polarity not protected against incorrect polarity low state; note 1 high state; note 2; see Fig.5 high state; note 2; see Fig.6 VCC = 16.5 V; IOUT = 20 mA VCC = 5 V MIN. -0.5 -0.5 - - - - -40 -40 -
KMI18/2
MAX. +16.5 +24 20 100 100 300 +150 +150 260 V V
UNIT
mA µA µA mW °C °C °C
CHARACTERISTICS Tamb = 26 ± 10 °C; VCC = 5 V; frm = 0 to 25 000 Hz; magnetic reading point according to `Package outline'; unless otherwise specified. SYMBOL PARAMETER CONDITIONS Tamb = 25 °C Tamb = -40 to +150 °C Tamb = 25 °C Tamb = -40 to +150 °C MIN. TYP. MAX. UNIT
Sensor characteristics HyLH HyHL Hy0 Hyh Hx frm magnetic trigger field strength (threshold) for LH-output edge magnetic trigger field strength (threshold) for HL-output edge magnetic offset magnetic trigger hysteresis auxiliary magnetic field strength frequency of magnetic reference marks Tamb = 26 ± 10 °C; VCC = 5 V Tamb = -40 to +150 °C; VCC = 5 V VCC DC supply voltage Tamb = -40 to +150 °C change of magnetic reference field Hy low state; note 1 Signal output characteristics transfer behaviour power-on state IOUT output current NS HL SN LH undefined 0.1 - 20 mA 100 -200 -400 -600 -150 100 5 0 250 +250 -250 -250 - 500 8 - 400 +600 -100 +200 +150 700 10 25 000 A/m A/m A/m A/m A/m A/m kA/m Hz
Supply conditions ICC DC supply current 6.5 6 4.5 7.5 7 5 8.5 10 16.5 mA mA V
2000 Sep 05
3
