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Part: KMI20/4

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Company: Philips Semiconductors

Datasheet: Download KMI20/4 datasheet     File size : 42 kB

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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D283
KMI20/4 Rotational speed sensor for extended air gap application
Objective specification 2000 Sep 04
Philips Semiconductors
Objective specification
Rotational speed sensor for extended air gap application
FEATURES · Digital current output signal · Digital offset compensation · Extended air gap · Zero speed capability · Wide temperature range · High tolerance to vibration · EMC resistant · Tolerant to positioning. DESCRIPTION The KMI 20/4 is a sensitive rotational speed sensor designed for use in applications utilizing ferrous gear wheels(1). The sensor consists of a magnetoresistive sensor element, a driver IC in BIMOS technology, a digital signal conditioning IC in highly integrated CMOS technology and a magnetized ferrite magnet. The frequency of the digital current output signal is proportional to the rotational speed of the gear wheel. CAUTION Do not press two or more products together against their magnetic forces.
(1) The sensor contains customized integrated circuits. Usage in hydraulic brake systems and in systems with active brake control is forbidden. For all other applications, higher temperature versions of up to 150 °C are available on request.
handbook, halfpage
KMI20/4
PINNING PIN 1 2 SYMBOL VCC V-
1
2
MBH782
Fig.1 Simplified outline (SOT453C).
QUICK REFERENCE DATA SYMBOL VCC ICC (low) ICC (high) d ft Tamb DC supply voltage current output signal low current output signal high sensing distance operating tooth frequency ambient operating temperature PARAMETER 0 5.6 11.2 0 to 3.6 0 -40 MIN. 7 14 0 to 4.1 - - TYP. 12 MAX. 18 8.4 16.8 - 2 500 +85 V mA mA mm Hz °C UNIT
2000 Sep 04
2
Philips Semiconductors
Objective specification
Rotational speed sensor for extended air gap application
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC Tstg Tamb Tsld PARAMETER DC supply voltage storage temperature operating ambient temperature soldering temperature output short-circuit duration wrong polarity Note t < 10 s VCC to GND; see Fig.7 Tamb = -40 to +65 °C, RL = 115 ; note 1 CONDITIONS Tamb = -40 to +85 °C; RL = 115 0 -65 -40 - MIN.
KMI20/4
MAX. 18 +150 +85 260
UNIT V °C °C °C
continuous continuous
1. With RL = 115 the device is continuously protected against wrong polarity of the DC supply voltage (VCC) to GND (see Fig.7). CHARACTERISTICS Tamb = 25 °C; VCC = 12 V; d = 1.7 mm; ft = 2 kHz; test circuit; see Fig.7; RL = 115 ; central sensor positioning: see Fig.9; gear wheel: module 2 mm; material 95MnPb28k; unless otherwise specified. SYMBOLS ICC (low) ICC (high) tr tf ft din 0 Hz din 1 Hz dact in 0 Hz in 1 Hz act PARAMETER current output low current output high output signal rise time output signal fall time operating tooth frequency sensing distance in initial mode for signals 0 Hz 1 Hz sensing distance in active mode CONDITIONS -40 to +85 °C; see Figs 7 and 9 -40 to +85 °C; see Figs 7 and 9 CL = 100 pF; 10% to 90% value; see Fig.11 CL = 100 pF; 90% to 10% value; see Fig.11 see Fig.9 see Fig.9 see Fig.9 MIN. 5.6 11.2 - - 7 14 0.5 0.5 - TYP. MAX. 8.4 16.8 - - 2 500 UNIT mA mA µs µs Hz mm mm mm % % %
for both rotational directions 0
0 to 2.1 0 to 2.5 - 0 to 3.1 0 to 3.5 - 0 to 3.6 0 to 4.1 - 20 20 40 50 50 50 80 80 60
duty cycle in initial mode for signals see Fig.5 >0 Hz duty cycle in initial mode for signals see Fig.5 >1 Hz duty cycle in active mode see Fig.5
2000 Sep 04
3


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